SCHEMBL977231

SCHEMBL977231

C[Si](Oc1ccccc1)(Oc1ccccc1)[Si](C)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.55
LTA4H P09960 5/20 0.46
TSHR P16473 1/20 0.45
NPC1 O15118 2/20 0.39
RAB9A P51151 2/20 0.39
KCNA3 P22001 1/20 0.38
CA12 O43570 1/20 0.36
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CA7 P43166 1/20 0.36
CA9 Q16790 1/20 0.36
CA14 Q9ULX7 1/20 0.36
TP53 P04637 1/20 0.36
NFKB1 P19838 1/20 0.36
NFKB2 Q00653 1/20 0.36
RELA Q04206 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
CA5A P35218 1/20 0.36
CA5B Q9Y2D0 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL974831 0.87 CA4 (0.48) CA4LTA4HTSHRNPC1RAB9A
SCHEMBL974881 0.87 CA4 (0.48) CA4LTA4HTSHRNPC1RAB9A
SCHEMBL5670727 0.84 CA4 (0.41) CA4LTA4HTSHRNPC1RAB9A
SCHEMBL232678 0.82 CA4 (0.48) CA4LTA4HTSHRNPC1RAB9A
SCHEMBL188026 0.82 CA4 (0.48) CA4LTA4HTSHRNPC1RAB9A
SCHEMBL308311 0.82 CA4 (0.48) CA4LTA4HTSHRNPC1RAB9A
SCHEMBL976629 0.82 CA4 (0.48) CA4LTA4HTSHRNPC1RAB9A
SCHEMBL9678425 0.82 CA4 (0.48) CA4LTA4HTSHRNPC1RAB9A
Ammonia Solution, Strong SCHEMBL28447150 0.80 CA4 (0.46) CA4LTA4HTSHRNPC1RAB9A
SCHEMBL10951653 0.78 CA4 (0.43) CA4LTA4HTSHRNPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 134 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12346026-B2 Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device FUJIFILM CORPORATION (JP) 2025-07-01 US disclosed
US-20220252985-A1 COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-08-11 US disclosed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10234762-B2 Pattern-forming method JSR CORPORATION (JP) 2019-03-19 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20170003592-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-01-05 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 US disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed