SCHEMBL9752811

SCHEMBL9752811

F/C=C/I

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18984825 1.00
SCHEMBL1866728 1.00
SCHEMBL2160906 0.72
SCHEMBL5178147 0.63
SCHEMBL2264148 0.63
SCHEMBL529 0.63
SCHEMBL56 0.63
SCHEMBL1760771 0.63
SCHEMBL21072680 0.63
SCHEMBL2331212 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3563406-B1 IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AIR LIQUIDE (FR) 2024-04-24 EP disclosed
CN-111655659-B Method for producing compound having butadiene skeleton containing hydrogen and fluorine and/or chlorine 关东电化工业株式会社 2023-03-28 CN disclosed
US-11430663-B2 Iodine-containing compounds for etching semiconductor structures AMERICAN AIR LIQUIDE, INC. (US) 2022-08-30 US disclosed
US-20200377434-A1 METHOD OF PRODUCING COMPOUND HAVING BUTADIENE SKELETON CONTAINING HYDROGEN AND FLUORINE AND/OR CHLORINE KANTO DENKA KOGYO CO., LTD. (JP) 2020-12-03 US disclosed
CN-111655659-A Method for producing compound having butadiene skeleton containing hydrogen and fluorine and/or chlorine 关东电化工业株式会社 2020-09-11 CN disclosed
US-20200203174-A1 IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AIR LIQUIDE AMERICAN (US) 2020-06-25 US disclosed
US-20200203174-A1 IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AIR LIQUIDE AMERICAN (US) 2020-06-25 US disclosed
US-10607850-B2 Iodine-containing compounds for etching semiconductor structures AMERICAN AIR LIQUIDE, INC. (US) 2020-03-31 US disclosed
US-10607850-B2 Iodine-containing compounds for etching semiconductor structures AMERICAN AIR LIQUIDE, INC. (US) 2020-03-31 US disclosed
CN-110546125-A method for producing compound having butadiene skeleton containing hydrogen and fluorine and/or chlorine KANTO DENKA KOGYO KK 2019-12-06 CN disclosed
WO-2019151467-A1 METHOD FOR PRODUCING COMPOUND HAVING BUTADIENE SKELETON CONTAINING HYDROGEN AND FLUORINE AND/OR CHLORINE 関東電化工業株式会社 2019-08-08 WO disclosed
US-20170178923-A1 IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AMERICAN AIR LIQUIDE, INC. 2017-06-22 US disclosed
US-20170178923-A1 IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AMERICAN AIR LIQUIDE, INC. 2017-06-22 US disclosed
US-20170178923-A1 IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AMERICAN AIR LIQUIDE, INC. 2017-06-22 US disclosed
WO-1991009001-A1 1,1,2-TRIFLUORO-6-IODO-1-HEXENE, 1,1,2-TRIFLUORO-1,5-HEXADIENE, AND PROCESSES THEREFOR E.I. DU PONT DE NEMOURS AND COMPANY (US) 1991-06-27 WO disclosed
US-5015790-A 1,1,2-trifluoro-6-iodo-1-hexene, 1,1,2-trifluoro-1,5-hexadiene, and processes therefore E. I. DU PONT DE NEMOURS AND COMPANY (US) 1991-05-14 US disclosed