⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2069057 | 0.82 | — | — | |
| SCHEMBL271946 | 0.82 | — | — | |
| SCHEMBL51738 | 0.82 | — | — | |
| SCHEMBL1491983 | 0.67 | — | — | |
| Iodide SCHEMBL17782955 | 0.67 | — | — | |
| SCHEMBL1537999 | 0.67 | — | — | |
| SCHEMBL3290231 | 0.67 | — | — | |
| SCHEMBL7897303 | 0.67 | — | — | |
| SCHEMBL18889660 | 0.67 | — | — | |
| SCHEMBL1002726 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115547821-A | Power semiconductor device and method for producing power semiconductor device | 英飞凌科技股份有限公司 | 2022-12-30 | — | — | CN | claimed |
| US-9318436-B2 | Copper based nitride liner passivation layers for conductive copper structures | GLOBALFOUNDRIES INC. (KY) | 2016-04-19 | — | — | US | claimed |
| US-20140361435-A1 | METHODS OF FORMING COPPER-BASED NITRIDE LINER/PASSIVATION LAYERS FOR CONDUCTIVE COPPER STRUCTURES AND THE RESULTING DEVICE | GLOBALFOUNDRIES INC. (KY) | 2014-12-11 | — | — | US | claimed |
| US-8859419-B2 | Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device | GLOBALFOUNDRIES INC. (KY) | 2014-10-14 | — | — | US | claimed |
| US-20140217588-A1 | METHODS OF FORMING COPPER-BASED NITRIDE LINER/PASSIVATION LAYERS FOR CONDUCTIVE COPPER STRUCTURES AND THE RESULTING DEVICE | GLOBALFOUNDRIES INC. (KY) | 2014-08-07 | — | — | US | claimed |
| US-8753975-B1 | Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device | GLOBALFOUNDRIES INC. (KY) | 2014-06-17 | — | — | US | claimed |
| US-20110003474-A1 | Germanium-Containing Dielectric Barrier for Low-K Process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2011-01-06 | — | — | US | claimed |
| CN-115547821-A | Power semiconductor device and method for producing power semiconductor device | 英飞凌科技股份有限公司 | 2022-12-30 | — | — | CN | disclosed |
| US-9318436-B2 | Copper based nitride liner passivation layers for conductive copper structures | GLOBALFOUNDRIES INC. (KY) | 2016-04-19 | — | — | US | disclosed |
| US-20140361435-A1 | METHODS OF FORMING COPPER-BASED NITRIDE LINER/PASSIVATION LAYERS FOR CONDUCTIVE COPPER STRUCTURES AND THE RESULTING DEVICE | GLOBALFOUNDRIES INC. (KY) | 2014-12-11 | — | — | US | disclosed |
| US-8859419-B2 | Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device | GLOBALFOUNDRIES INC. (KY) | 2014-10-14 | — | — | US | disclosed |
| US-20140217588-A1 | METHODS OF FORMING COPPER-BASED NITRIDE LINER/PASSIVATION LAYERS FOR CONDUCTIVE COPPER STRUCTURES AND THE RESULTING DEVICE | GLOBALFOUNDRIES INC. (KY) | 2014-08-07 | — | — | US | disclosed |
| US-8753975-B1 | Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device | GLOBALFOUNDRIES INC. (KY) | 2014-06-17 | — | — | US | disclosed |