⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2429907 | 1.00 | — | — | |
| SCHEMBL51738 | 0.82 | — | — | |
| SCHEMBL1537999 | 0.67 | — | — | |
| SCHEMBL2443636 | 0.67 | — | — | |
| Water SCHEMBL1499971 | 0.67 | — | — | |
| SCHEMBL890500 | 0.67 | — | — | |
| SCHEMBL7897303 | 0.67 | — | — | |
| SCHEMBL4130934 | 0.67 | — | — | |
| SCHEMBL5013113 | 0.67 | — | — | |
| SCHEMBL975457 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20220415820-A1 | Power Semiconductor Device and Method of Producing a Power Semiconductor Device | INFINEON TECHNOLOGIES AG (DE) | 2022-12-29 | — | — | US | claimed |
| US-7718548-B2 | Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface | APPLIED MATERIALS, INC. (US) | 2010-05-18 | — | — | US | claimed |
| US-20080213997-A1 | SELECTIVE COPPER-SILICON-NITRIDE LAYER FORMATION FOR AN IMPROVED DIELECTRIC FILM/COPPER LINE INTERFACE | APPLIED MATERIALS, INC. (US) | 2008-09-04 | — | — | US | claimed |
| CN-114477779-B | Multi-layer glass substrate process and structure based on heterogeneous bonding | 厦门云天半导体科技有限公司 | 2023-09-08 | — | — | CN | disclosed |
| CN-115547821-A | Power semiconductor device and method for producing power semiconductor device | 英飞凌科技股份有限公司 | 2022-12-30 | — | — | CN | disclosed |
| US-20220415820-A1 | Power Semiconductor Device and Method of Producing a Power Semiconductor Device | INFINEON TECHNOLOGIES AG (DE) | 2022-12-29 | — | — | US | disclosed |
| US-20220415820-A1 | Power Semiconductor Device and Method of Producing a Power Semiconductor Device | INFINEON TECHNOLOGIES AG (DE) | 2022-12-29 | — | — | US | disclosed |
| EP-4108377-A1 | BRAZING FILLER MATERIAL, BONDED BODY, CERAMIC CIRCUIT BOARD, AND METHOD FOR PRODUCING BONDED BODY | KABUSHIKI KAISHA TOSHIBA (JP) | 2022-12-28 | — | — | EP | disclosed |
| CN-114477779-A | Multilayer glass substrate process and structure based on heterogeneous bonding | 厦门云天半导体科技有限公司 | 2022-05-13 | — | — | CN | disclosed |
| CN-106065278-B | Polysiloxane compositions and coatings for optoelectronic applications | 霍尼韦尔国际公司 | 2021-08-10 | — | — | CN | disclosed |
| EP-3830868-A1 | THREE-DIMENSIONAL HIGH QUALITY PASSIVE STRUCTURE WITH CONDUCTIVE PILLAR TECHNOLOGY | QUALCOMM INCORPORATED (US) | 2021-06-09 | — | — | EP | disclosed |
| EP-1614152-A1 | SACRIFICIAL METAL LINER FOR COPPER INTERCONNECTS | International Business Machines Corporation (US) | 2006-01-11 | — | — | EP | disclosed |
| CN-1552096-A | Method of forming copper interconnect capping layers with improved interface and adhesion | �Ƚ�װ�ù�˾ | 2004-12-01 | — | — | CN | disclosed |
| WO-2004070830-A1 | SACRIFICIAL METAL LINER FOR COPPER INTERCONNECTS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2004-08-19 | — | — | WO | disclosed |
| US-20040152295-A1 | Sacrificial metal liner for copper | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2004-08-05 | — | — | US | disclosed |
| US-20040150103-A1 | Sacrificial Metal Liner For Copper | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-08-05 | — | — | US | disclosed |
| US-20040152333-A1 | Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness | ADVANCED MICRO DEVICES, INC. | 2004-08-05 | — | — | US | disclosed |
| US-6656840-B2 | Method for forming silicon containing layers on a substrate | APPLIED MATERIALS INC. | 2003-12-02 | — | — | US | disclosed |
| US-20030203614-A1 | METHOD FOR FORMING SILICON CONTAINING LAYERS ON A SUBSTRATE | APPLIED MATERIALS, INC. (US) | 2003-10-30 | — | — | US | disclosed |
| US-20030072695-A1 | Method of removing oxidized portions at an interface of a metal surface and capping layer in a semiconductor metallization layer | ADVANCED MICRO DEVICES, INC. | 2003-04-17 | — | — | US | disclosed |