SCHEMBL975718

SCHEMBL975718

CC(O)NCN

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27099 0.75
SCHEMBL28852761 0.73
SCHEMBL525195 0.72 LMNA (0.36)
SCHEMBL6970431 0.72
SCHEMBL344693 0.71
Hydroxyamine SCHEMBL28342628 0.71 TSHR (0.37)
SCHEMBL974528 0.69
SCHEMBL14217452 0.69
SCHEMBL1719639 0.69
SCHEMBL96784 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117923502-A Quartz micro powder and growth method thereof 隆基绿能科技股份有限公司 2024-04-26 CN claimed
CN-117923875-A Composite board, preparation method and carrier 隆基绿能科技股份有限公司 2024-04-26 CN claimed
CN-117923502-A Quartz micro powder and growth method thereof 隆基绿能科技股份有限公司 2024-04-26 CN disclosed
CN-117923875-A Composite board, preparation method and carrier 隆基绿能科技股份有限公司 2024-04-26 CN disclosed
US-11565502-B2 Bonding method TOYOTA BOSHOKU KABUSHIKI KAISHA (JP) 2023-01-31 US disclosed
CN-111253867-B Bonding method 丰田纺织株式会社 2022-05-13 CN disclosed
CN-111251698-B Laminate and method for producing same 丰田纺织株式会社 2022-03-08 CN disclosed
CN-105676601-B Pretreatment method of glass substrate for forming etching mask 东京应化工业株式会社 2020-08-07 CN disclosed
CN-111253867-A Bonding method 丰田纺织株式会社 2020-06-09 CN disclosed
CN-111251698-A Laminate and method for producing same 丰田纺织株式会社 2020-06-09 CN disclosed
US-20200171793-A1 BONDING METHOD TOYOTA BOSHOKU KABUSHIKI KAISHA (JP) 2020-06-04 US disclosed
US-20020086167-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-07-04 US disclosed
US-6413647-B1 USEFUL AS INTERLAYER DIELECTRIC FILM IN SEMICONDUCTOR DEVICES; MECHANICAL STRENGTH JSR CORPORATION (JP) 2002-07-02 US disclosed
US-6410151-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-6410150-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed