Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRA1 | P14867 | 4/20 | 0.33 |
| ▸ | GABRG2 | P18507 | 4/20 | 0.33 |
| ▸ | GABRB3 | P28472 | 4/20 | 0.33 |
| ▸ | GABRA5 | P31644 | 4/20 | 0.33 |
| ▸ | GABRA3 | P34903 | 4/20 | 0.33 |
| ▸ | GABRA2 | P47869 | 4/20 | 0.33 |
| ▸ | GABRA6 | Q16445 | 2/20 | 0.33 |
| ▸ | GABRP | O00591 | 1/20 | 0.33 |
| ▸ | GABRD | O14764 | 1/20 | 0.33 |
| ▸ | GABRB1 | P18505 | 1/20 | 0.33 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.33 |
| ▸ | GABRA4 | P48169 | 1/20 | 0.33 |
| ▸ | GABRE | P78334 | 1/20 | 0.33 |
| ▸ | GABRG1 | Q8N1C3 | 1/20 | 0.33 |
| ▸ | GABRG3 | Q99928 | 1/20 | 0.33 |
| ▸ | GABRQ | Q9UN88 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | MCHR1 | Q99705 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL645558 | 0.81 | ALDH1A1 (0.35) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL975661 | 0.77 | ALDH1A1 (0.34) | TSHRMCHR1ALDH1A1SMN1; SMN2SLC2A1 | |
| SCHEMBL426113 | 0.77 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL976903 | 0.75 | MCHR1 (0.35) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL427067 | 0.72 | MAPT (0.35) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL4275381 | 0.72 | MAPT (0.35) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL4274025 | 0.71 | ABCB1 (0.35) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL4266063 | 0.71 | ABCB1 (0.35) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL4276271 | 0.71 | ESR1 (0.36) | GABRA1GABRG2GABRB3GABRA5GABRA3 | |
| SCHEMBL4270393 | 0.69 | MAPT (0.33) | GABRA1GABRG2GABRB3GABRA5GABRA3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 132 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1520891-B1 | FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM | JSR CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9233840-B2 | Method for improving self-assembled polymer features | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-01-12 | — | — | US | disclosed |
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-9116427-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-08-25 | — | — | US | disclosed |
| US-20020045693-A1 | Composition for film formation, method of film formation and silica-based film | JSR CORPORATION (JP) | 2002-04-18 | — | — | US | disclosed |
| US-20020020327-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-02-21 | — | — | US | disclosed |
| US-20010055892-A1 | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2001-12-27 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |
| EP-1160848-A2 | Composition for silica-based film formation | JSR Corporation (JP) | 2001-12-05 | — | — | EP | disclosed |
| EP-1148105-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-24 | — | — | EP | disclosed |
| EP-1146092-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-17 | — | — | EP | disclosed |
| EP-1127929-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-08-29 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |