Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MCHR1 | Q99705 | 1/20 | 0.35 |
| ▸ | GPBAR1 | Q8TDU6 | 1/20 | 0.33 |
| ▸ | CYSLTR1 | Q9Y271 | 1/20 | 0.33 |
| ▸ | GABRP | O00591 | 1/20 | 0.32 |
| ▸ | GABRD | O14764 | 1/20 | 0.32 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.32 |
| ▸ | GABRB1 | P18505 | 1/20 | 0.32 |
| ▸ | GABRG2 | P18507 | 1/20 | 0.32 |
| ▸ | GABRB3 | P28472 | 1/20 | 0.32 |
| ▸ | GABRA5 | P31644 | 1/20 | 0.32 |
| ▸ | GABRA3 | P34903 | 1/20 | 0.32 |
| ▸ | GABRA2 | P47869 | 1/20 | 0.32 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.32 |
| ▸ | GABRA4 | P48169 | 1/20 | 0.32 |
| ▸ | GABRE | P78334 | 1/20 | 0.32 |
| ▸ | GABRA6 | Q16445 | 1/20 | 0.32 |
| ▸ | GABRG1 | Q8N1C3 | 1/20 | 0.32 |
| ▸ | GABRG3 | Q99928 | 1/20 | 0.32 |
| ▸ | GABRQ | Q9UN88 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7514572 | 0.88 | MCHR1 (0.30) | MCHR1 | |
| SCHEMBL645558 | 0.86 | ALDH1A1 (0.35) | MCHR1GABRPGABRDGABRA1GABRB1 | |
| SCHEMBL975661 | 0.83 | ALDH1A1 (0.34) | MCHR1ALDH1A1TP53HSP90AA1CYP3A4 | |
| SCHEMBL975996 | 0.79 | — | — | |
| SCHEMBL976241 | 0.75 | GABRA1 (0.33) | MCHR1GPBAR1CYSLTR1GABRPGABRD | |
| SCHEMBL4275381 | 0.73 | MAPT (0.35) | MCHR1GPBAR1CYSLTR1GABRPGABRD | |
| SCHEMBL427067 | 0.73 | MAPT (0.35) | MCHR1GABRPGABRDGABRA1GABRB1 | |
| SCHEMBL4274025 | 0.72 | ABCB1 (0.35) | MCHR1GPBAR1CYSLTR1GABRPGABRD | |
| SCHEMBL4276271 | 0.72 | ESR1 (0.36) | MCHR1GPBAR1CYSLTR1GABRPGABRD | |
| SCHEMBL4266063 | 0.72 | ABCB1 (0.35) | MCHR1GPBAR1CYSLTR1GABRPGABRD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 105 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1520891-B1 | FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM | JSR CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9233840-B2 | Method for improving self-assembled polymer features | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-01-12 | — | — | US | disclosed |
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-9116427-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-08-25 | — | — | US | disclosed |
| EP-1298176-A2 | Stacked film insulating film and substrate for semiconductor | JSR Corporation (JP) | 2003-04-02 | — | — | EP | disclosed |
| US-20030059550-A1 | Method of film formation, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| US-20030059628-A1 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| EP-1295924-A2 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| US-6495264-B2 | HYDROLYSIS AND CONDENSATION OF SILANE COMPOUND IN PRESENCE OF WATER AND TETRAALKYLAMMONIUM HYDROXIDES, ALICYCLIC AMINES, AND METAL HYDROXIDES IN SOLVENT FOR FORMING DIELECTRIC LAYER FOR SEMICONDUCTORS | JSR CORPORATION (JP) | 2002-12-17 | — | — | US | disclosed |
| US-6465368-B2 | DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS | JSR CORPORATION (JP) | 2002-10-15 | — | — | US | disclosed |
| US-20020142586-A1 | Method of forming dual damascene structure | JSR CORPORATION (JP) | 2002-10-03 | — | — | US | disclosed |
| US-20020086167-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-07-04 | — | — | US | disclosed |
| US-6410150-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |