⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27562750 | 0.89 | — | — | |
| SCHEMBL27595635 | 0.89 | — | — | |
| SCHEMBL29463678 | 0.87 | — | — | |
| SCHEMBL28047372 | 0.87 | — | — | |
| SCHEMBL27805210 | 0.87 | — | — | |
| SCHEMBL472161 | 0.87 | — | — | |
| SCHEMBL261674 | 0.87 | — | — | |
| SCHEMBL29199128 | 0.87 | — | — | |
| SCHEMBL2789643 | 0.87 | — | — | |
| SCHEMBL27813861 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118497838-A | Method for preparing prefabricated aluminum-silicon-copper-titanium alloy in short process | 黄治齐 | 2024-08-16 | — | — | CN | claimed |
| US-11670685-B2 | Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device | STMICROELECTRONICS S.R.L. (IT) | 2023-06-06 | — | — | US | claimed |
| US-20250176235-A1 | OHMIC CONTACT FORMATION IN A SIC-BASED ELECTRONIC DEVICE | STMICROELECTRONICS INTERNATIONAL N.V. (CH) | 2025-05-29 | — | — | US | disclosed |
| US-12249624-B2 | Ohmic contact formation in a SiC-based electronic device | STMICROELECTRONICS S.R.L. (IT) | 2025-03-11 | — | — | US | disclosed |
| US-20250022919-A1 | DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SiC ELECTRONIC DEVICE, AND SiC ELECTRONIC DEVICE | STMICROELECTRONICS S.R.L. (IT) | 2025-01-16 | — | — | US | disclosed |
| CN-118497838-A | Method for preparing prefabricated aluminum-silicon-copper-titanium alloy in short process | 黄治齐 | 2024-08-16 | — | — | CN | disclosed |
| CN-118497838-A | Method for preparing prefabricated aluminum-silicon-copper-titanium alloy in short process | 黄治齐 | 2024-08-16 | — | — | CN | disclosed |
| CN-118497838-A | Method for preparing prefabricated aluminum-silicon-copper-titanium alloy in short process | 黄治齐 | 2024-08-16 | — | — | CN | disclosed |
| US-12051725-B2 | Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device | STMICROELECTRONICS S.R.L. (IT) | 2024-07-30 | — | — | US | disclosed |
| US-20230343831-A1 | DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SiC ELECTRONIC DEVICE, AND SiC ELECTRONIC DEVICE | STMICROELECTRONICS S.R.L. (IT) | 2023-10-26 | — | — | US | disclosed |
| US-11670685-B2 | Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device | STMICROELECTRONICS S.R.L. (IT) | 2023-06-06 | — | — | US | disclosed |
| US-20210328022-A1 | OHMIC CONTACT FORMATION IN A SIC-BASED ELECTRONIC DEVICE | STMICROELECTRONICS S.R.L. (IT) | 2021-10-21 | — | — | US | disclosed |
| CN-110468307-A | Increase the method for Titanium In Aluminum Alloy | GM GLOBAL TECH OPERATIONS LLC | 2019-11-19 | — | — | CN | disclosed |
| US-20190345588-A1 | METHODS TO INCREASE TITANIUM IN ALUMINUM ALLOYS | GM Global Technology Operations LLC (US) | 2019-11-14 | — | — | US | disclosed |
| CN-109321788-A | A kind of acieral, the big alloy of aluminium base and preparation method thereof | 王晓军 | 2019-02-12 | — | — | CN | disclosed |
| CN-103725935-B | A kind of aluminium Si-Cu rare earth alloy material for permanent mold casting and its preparation method and application | PINGYIN YUESHEN STRONG DIE-CASTING CO., LTD. (CN) | 2016-01-20 | — | — | CN | disclosed |
| US-8450722-B2 | Magnetoresistive random access memory and method of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-05-28 | — | — | US | disclosed |
| US-20130015538-A1 | MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-01-17 | — | — | US | disclosed |
| CN-1398426-A | Method for improving liquid deposition by selection of liquid viscosity and other precursor characteristics | SYMETRIX CORP (US) | 2003-02-19 | — | — | CN | disclosed |
| US-4999160-A | Stress resistance, noncracking, nondiffusing | MICRON TECHNOLOGY, INC. (US) | 1991-03-12 | — | — | US | disclosed |