SCHEMBL978782

SCHEMBL978782

NCCCNCO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL974968 0.91
SCHEMBL16384580 0.88
SCHEMBL21082738 0.88 CA12 (0.60)
SCHEMBL125862 0.87
SCHEMBL1627711 0.81
SCHEMBL2058092 0.81 CA12 (0.69)
SCHEMBL10885036 0.81 CA12 (0.69)
Norspermidine SCHEMBL15387 0.79
Norspermidine SCHEMBL22129782 0.79 CA12 (0.92)
SCHEMBL1720393 0.79

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1031884-B1 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL CO (JP) 2012-01-11 EP claimed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
CN-101398639-A Composition for stripping and stripping method SAMSUNG ELECTRONICS CO LTD (KR) 2009-04-01 CN claimed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US claimed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US claimed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP claimed
US-20220395589-A1 POLYMERIC NANOPARTICLES FOR INTRACELLULAR PROTEIN DELIVERY THE JOHNS HOPKINS UNIVERSTY 2022-12-15 US disclosed
CN-110603273-B Modified block copolymer, method for producing modified block copolymer, and resin composition 旭化成株式会社 2022-10-14 CN disclosed
WO-2022112855-A1 LIPID COMPOUND AND THE COMPOSITION THEREOF Guangzhou Ribobio Co., Ltd (CN) 2022-06-02 WO disclosed
CN-105676601-B Pretreatment method of glass substrate for forming etching mask 东京应化工业株式会社 2020-08-07 CN disclosed
CN-110950781-A Novel diamine, polyamic acid, and polyimide 日产化学工业株式会社 2020-04-03 CN disclosed
US-10023530-B2 Diamine, polyamic acid, and polyimide NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-07-17 US disclosed
US-6410150-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed
US-4072741-A BACTERICIDES, FUNGICIDES IMC CHEMICAL GROUP, INC. (US) 1978-02-07 US disclosed