SCHEMBL974968

SCHEMBL974968

NCCCCNCO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21082738 0.97 CA12 (0.60)
SCHEMBL16384580 0.97
SCHEMBL978782 0.91
SCHEMBL125862 0.84
SCHEMBL1720385 0.84 CYP1A2 (0.39)
SCHEMBL322518 0.81 CA12 (0.93)
SCHEMBL323273 0.81 CA12 (0.93)
SCHEMBL2012007 0.81 CA12 (0.93)
SCHEMBL15605765 0.81 MAOA (0.40)
SCHEMBL732232 0.81 CA12 (0.93)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1031884-B1 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL CO (JP) 2012-01-11 EP claimed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
CN-101398639-A Composition for stripping and stripping method SAMSUNG ELECTRONICS CO LTD (KR) 2009-04-01 CN claimed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US claimed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US claimed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP claimed
CN-105676601-B Pretreatment method of glass substrate for forming etching mask 东京应化工业株式会社 2020-08-07 CN disclosed
CN-110950781-A Novel diamine, polyamic acid, and polyimide 日产化学工业株式会社 2020-04-03 CN disclosed
US-10023530-B2 Diamine, polyamic acid, and polyimide NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-07-17 US disclosed
US-20160264520-A1 NOVEL DIAMINE, POLYAMIC ACID, AND POLYIMIDE NISSAN CHEMICAL INDUSTRIES. LTD. (JP) 2016-09-15 US disclosed
US-20150296646-A1 PROTECTIVE PLATE AND DISPLAY DEVICE SHARP KABUSHIKI KAISHA (JP) 2015-10-15 US disclosed
US-8790990-B2 Silica-based film forming material for formation of air gaps, and method for forming air gaps TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-29 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed
US-4072741-A BACTERICIDES, FUNGICIDES IMC CHEMICAL GROUP, INC. (US) 1978-02-07 US disclosed