Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LCK | P06239 | 1/20 | 0.51 |
| ▸ | MAPT | P10636 | 2/20 | 0.50 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.49 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.46 |
| ▸ | POLB | P06746 | 2/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.45 |
| ▸ | HPGD | P15428 | 1/20 | 0.45 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.45 |
| ▸ | PDGFRB | P09619 | 1/20 | 0.45 |
| ▸ | CA1 | P00915 | 2/20 | 0.45 |
| ▸ | CA2 | P00918 | 2/20 | 0.45 |
| ▸ | CA12 | O43570 | 1/20 | 0.45 |
| ▸ | CA7 | P43166 | 1/20 | 0.45 |
| ▸ | XDH | P47989 | 1/20 | 0.45 |
| ▸ | CA9 | Q16790 | 1/20 | 0.45 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.45 |
| ▸ | KIF11 | P52732 | 1/20 | 0.43 |
| ▸ | USP2 | O75604 | 1/20 | 0.43 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28813261 | 0.87 | LCK (0.55) | LCKMAPTCYP3A4KDM4EPOLB | |
| SCHEMBL2910845 | 0.86 | TPMT (0.54) | MAPTKDM4EALDH1A1HPGDSMN1; SMN2 | |
| SCHEMBL27916584 | 0.84 | LCK (0.48) | LCKMAPTCYP3A4KDM4EPOLB | |
| SCHEMBL28858601 | 0.76 | LCK (0.56) | LCKMAPTKDM4EKMT2AALDH1A1 | |
| SCHEMBL18871345 | 0.75 | LCK (0.54) | LCKMAPTCYP3A4KDM4EPOLB | |
| SCHEMBL15855047 | 0.74 | MAPT (0.49) | LCKMAPTCYP3A4KDM4EKMT2A | |
| SCHEMBL15855070 | 0.74 | MAPT (0.49) | LCKMAPTCYP3A4KDM4EKMT2A | |
| SCHEMBL18402724 | 0.74 | LCK (0.57) | LCKMAPTCYP3A4KDM4EKMT2A | |
| SCHEMBL22559289 | 0.74 | LCK (0.50) | LCKMAPTKDM4EKMT2AALDH1A1 | |
| SCHEMBL4948601 | 0.74 | LCK (0.57) | LCKMAPTCYP3A4KDM4EPOLB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3109703-B1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME | TOKYO ELECTRON LTD (JP) | 2020-12-30 | — | — | EP | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170075221-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| EP-3133444-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-22 | — | — | EP | disclosed |
| EP-3133445-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-22 | — | — | EP | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| EP-0096214-B1 | ANTIBACTERIAL PYRIMIDINE COMPOUNDS | THE WELLCOME FOUNDATION LIMITED (GB) | 1991-02-27 | — | — | EP | disclosed |
| US-4587341-A | BACTERICIDES | BURROUGHS WELLCOME CO. (US) | 1986-05-06 | — | — | US | disclosed |
| EP-0096214-A1 | Antibacterial pyrimidine compounds | THE WELLCOME FOUNDATION LIMITED (GB) | 1983-12-21 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | LCK 2779/4885MAPT 2727/4885CYP3A4 2748/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | LCK 4687/4885MAPT 3421/4885CYP3A4 3044/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.