Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ELANE | P08246 | 15/20 | 0.60 |
| ▸ | KDM1A | O60341 | 1/20 | 0.45 |
| ▸ | CA2 | P00918 | 1/20 | 0.39 |
| ▸ | MAPKAPK2 | P49137 | 2/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18470649 | 0.91 | ELANE (0.50) | ELANEKDM1ACA2MAPKAPK2 | |
| SCHEMBL18470644 | 0.89 | ELANE (0.49) | ELANEKDM1AMEN1KMT2A | |
| SCHEMBL10064124 | 0.84 | ELANE (0.55) | ELANECA2KMT2A | |
| SCHEMBL18478402 | 0.84 | ELANE (0.57) | ELANEKDM1ACA2MAPKAPK2MEN1 | |
| SCHEMBL4061370 | 0.84 | ELANE (0.81) | ELANEKDM1ACA2MAPKAPK2MEN1 | |
| SCHEMBL12895341 | 0.83 | ELANE (0.56) | ELANEKDM1AKMT2A | |
| SCHEMBL683395 | 0.83 | ELANE (0.53) | ELANEMEN1KMT2A | |
| SCHEMBL92310 | 0.82 | ELANE (0.56) | ELANEMEN1KMT2A | |
| SCHEMBL10175753 | 0.81 | ELANE (0.46) | ELANEMEN1KMT2A | |
| SCHEMBL13563645 | 0.81 | ELANE (0.58) | ELANEMEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9897916-B2 | Compound, polymer compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9880472-B2 | Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same | FUJIFILM CORPORATION (JP) | 2018-01-30 | — | — | US | disclosed |
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20160320700-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9417528-B2 | Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-16 | — | — | US | disclosed |
| US-20160147157-A1 | PATTERN FORMATION METHOD, PATTERN, AND ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20150248056-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-09-03 | — | — | US | disclosed |
| US-9017918-B2 | Monomer, polymer, chemically amplified positive resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-04-28 | — | — | US | disclosed |
| US-20140363758-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-8703384-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-22 | — | — | US | disclosed |
| US-20130101936-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-25 | — | — | US | disclosed |
| US-20120164577-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120135350-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20110294070-A1 | MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-12-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | WDR1, WDR26, LBR | ELANE 2513/4885KDM1A 726/4885CA2 2386/4885 |
| US-20110294070-A1 | MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | PARG, PCNA, POLH | ELANE 1171/4885KDM1A 822/4885CA2 1036/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.