⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17826764 | 0.68 | — | — | |
| SCHEMBL18435821 | 0.63 | — | — | |
| SCHEMBL439889 | 0.63 | ATM (0.31) | — | |
| SCHEMBL9881053 | 0.62 | ICAM1 (0.36) | — | |
| SCHEMBL5521764 | 0.62 | ICAM1 (0.36) | — | |
| SCHEMBL23007994 | 0.60 | ICAM1 (0.44) | — | |
| SCHEMBL21567767 | 0.60 | ICAM1 (0.33) | — | |
| SCHEMBL21910754 | 0.60 | ICAM1 (0.33) | — | |
| SCHEMBL21475309 | 0.60 | ICAM1 (0.44) | — | |
| SCHEMBL10691677 | 0.60 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11586111-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-02-21 | — | — | US | disclosed |
| US-20200174369-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2020-06-04 | — | — | US | disclosed |
| US-20170192355-A1 | METHOD FOR FORMING NEGATIVE TONE PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION | FUJIFILM CORPORATION (JP) | 2017-07-06 | — | — | US | disclosed |
| US-20170184973-A1 | ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20170059995-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-9551931-B2 | Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-20160347897-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160349613-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160327866-A1 | PATTERN FORMING METHOD, TREATING AGENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING THE SAME | FUJIFILM CORPORATION (JP) | 2016-11-10 | — | — | US | disclosed |
| US-20090011199-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Negative-Type Resist Composition, and Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080311507-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-12-18 | — | — | US | disclosed |
| US-7442490-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| US-7442490-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| EP-1909140-A1 | Positive type resist composition and resist pattern formation method using same. | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-09 | — | — | EP | disclosed |
| US-20080044760-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-02-21 | — | — | US | disclosed |
| US-20070218405-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218405-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070105045-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION | 2007-05-10 | — | — | US | disclosed |
| US-20070105045-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION | 2007-05-10 | — | — | US | disclosed |