SCHEMBL989086

SCHEMBL989086

COc1ccc(C=COCC(C)C)cc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.50
KDM4E B2RXH2 3/20 0.50
CYP3A4 P08684 2/20 0.50
TP53 P04637 1/20 0.50
TSHR P16473 1/20 0.50
ALDH1A1 P00352 1/20 0.50
TRPA1 O75762 1/20 0.48
RELA Q04206 1/20 0.48
TUBB1 Q9H4B7 2/20 0.47
CYP1A2 P05177 3/20 0.47
CYP1A1 P04798 3/20 0.47
CYP1B1 Q16678 3/20 0.47
ESR1 P03372 2/20 0.47
PTGS2 P35354 2/20 0.47
AHR P35869 2/20 0.47
ABL1 P00519 1/20 0.47
TTR P02766 1/20 0.47
ABCB1 P08183 1/20 0.47
ALOX5 P09917 1/20 0.47
BCR P11274 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5670358 0.79 NPC1 (0.45) LMNAKDM4ECYP3A4TP53TRPA1
SCHEMBL7770602 0.79 NPC1 (0.45) LMNAKDM4ECYP3A4TP53TRPA1
SCHEMBL5026274 0.76 KDM4E (0.55) LMNAKDM4ECYP3A4TP53TSHR
SCHEMBL28662974 0.74 KDM4E (0.64) LMNAKDM4ECYP3A4TP53TSHR
SCHEMBL7868088 0.74 KDM4E (0.64) LMNAKDM4ECYP3A4TP53TSHR
SCHEMBL756486 0.74 KDM4E (0.64) LMNAKDM4ECYP3A4TP53TSHR
SCHEMBL13790336 0.73 RELA (0.81) LMNAKDM4ECYP3A4TP53TSHR
SCHEMBL4881152 0.73 RELA (0.81) LMNAKDM4ECYP3A4TP53TSHR
SCHEMBL631998 0.73 RELA (0.81) LMNAKDM4ECYP3A4TP53TSHR
SCHEMBL14950253 0.73 RELA (0.81) LMNAKDM4ECYP3A4TP53TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2270596-B1 Positive resist compostion and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
EP-2146247-B1 Resist patterning process and manufacturing photo mask SHINETSU CHEMICAL CO (JP) 2015-04-15 EP disclosed
CN-101943864-B Positive resist composition and patterning process SHINETSU CHEMICAL CO 2013-11-20 CN disclosed
CN-101625523-B Resist patterning forming process and manufacturing method of photo mask SHIN ETSU EHEMICAL CO LTD 2012-09-19 CN disclosed
CN-101943864-A Positive resist composition and patterning process SHINETSU CHEMICAL CO 2011-01-12 CN disclosed
EP-2270596-A2 Positive resist compostion and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2011-01-05 EP disclosed
EP-2146247-A1 Resist patterning process and manufacturing photo mask Shin-Etsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
CN-101625523-A Resist patterning process and manufacturing photo mask SHINETSU CHEMICAL CO 2010-01-13 CN disclosed
US-20080020289-A1 Novel polymer, positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed