SCHEMBL9908378

SCHEMBL9908378

CC1(F)C2CCC(C2)C1(F)F

nearest known ligand 0.37

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CHRNB2 P17787 4/20 0.37
CHRNB4 P30926 4/20 0.37
CHRNA3 P32297 4/20 0.37
CHRNA7 P36544 4/20 0.37
CHRNA4 P43681 4/20 0.37
CHRNA1 P02708 3/20 0.37
CHRNG P07510 3/20 0.37
CHRNB1 P11230 3/20 0.37
CHRND Q07001 3/20 0.37
LMNA P02545 1/20 0.37
CYP3A4 P08684 1/20 0.37
PKM P14618 1/20 0.37
NFKB1 P19838 1/20 0.37
CYP2C19 P33261 1/20 0.37
THPO P40225 1/20 0.37
CHRNE Q04844 1/20 0.37
CHRNA2 Q15822 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9908350 0.82 LMNA (0.31) LMNA
SCHEMBL14423156 0.78 CHRNB2 (0.33) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL11842095 0.78 CHRNB2 (0.48) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL9908369 0.70 CHRNB2 (0.32) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL24200566 0.65
SCHEMBL15003323 0.65
SCHEMBL4174626 0.65 CHRNB2 (0.60) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL15484142 0.65 CHRNB2 (0.40) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL13917617 0.63
SCHEMBL15660302 0.59 CHRNB2 (0.40) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7511179-B2 Fluorine-containing polymer, resist composition prepared from same and novel fluorine-containing monomer DAIKIN INDUSTRIES, LTD. (JP) 2009-03-31 US disclosed
US-20080026314-A1 Silane Compound, Polysiloxane, and Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2008-01-31 US disclosed
US-20070269735-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed