SCHEMBL9908408

SCHEMBL9908408

O=C1OCCC1CC1CC2CCC1C2

nearest known ligand 0.35

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.33
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
KMT2A Q03164 1/20 0.33
HPGD P15428 1/20 0.32
KCNH3 Q9ULD8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9908397 0.85 MEN1 (0.32) MEN1NPC1RAB9AKMT2AHPGD
SCHEMBL6721746 0.75 MEN1 (0.32) MEN1NPC1RAB9AKMT2AHPGD
SCHEMBL9818144 0.75 KCNH3 (0.38) KCNH3
SCHEMBL15935803 0.74
SCHEMBL14625815 0.73
SCHEMBL9908399 0.71 MEN1 (0.32) MEN1NPC1RAB9AKMT2AHPGD
SCHEMBL7708787 0.70 NPC1 (0.39) MEN1NPC1RAB9AKMT2AHPGD
SCHEMBL12259584 0.70
SCHEMBL15147149 0.69 CHRM5 (0.34) MEN1NPC1RAB9AKMT2AHPGD
SCHEMBL9908409 0.69 HPGD (0.34) MEN1NPC1RAB9AKMT2AHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7163778-B2 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-16 US disclosed