⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19036977 | 0.91 | — | — | |
| SCHEMBL19036969 | 0.79 | HSD11B1 (0.30) | — | |
| SCHEMBL19036971 | 0.77 | — | — | |
| SCHEMBL19043535 | 0.70 | ABCB1 (0.31) | — | |
| SCHEMBL14040479 | 0.70 | TP53 (0.33) | — | |
| SCHEMBL9908418 | 0.69 | — | — | |
| SCHEMBL20507029 | 0.69 | ADORA3 (0.33) | — | |
| SCHEMBL18499598 | 0.68 | — | — | |
| SCHEMBL13645224 | 0.68 | — | — | |
| SCHEMBL106215 | 0.68 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-11693314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-10310376-B2 | Resist composition, pattern forming process, polymer, and monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-06-04 | — | — | US | disclosed |
| US-20170184967-A1 | RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20170184967-A1 | RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-06-29 | — | — | US | disclosed |
| EP-3184561-A1 | RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER | Shin-Etsu Chemical Co., Ltd. (JP) | 2017-06-28 | — | — | EP | disclosed |
| US-9448482-B2 | Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-20150253673-A1 | PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| US-8198016-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-7695889-B2 | Copolymer for semiconductor lithography and process for production thereof | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-04-13 | — | — | US | disclosed |
| US-20090286188-A1 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-19 | — | — | US | disclosed |
| US-7241553-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-07-10 | — | — | US | disclosed |
| US-7241553-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-07-10 | — | — | US | disclosed |
| US-7163778-B2 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7163778-B2 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |