SCHEMBL9913265

SCHEMBL9913265

CC12CC3C(O)OC(C3C1)C2O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14466001 1.00 — —
SCHEMBL14944214 1.00 — —
SCHEMBL19068530 0.81 — —
SCHEMBL5521764 0.64 ICAM1 (0.36) —
SCHEMBL15856361 0.63 PTPN1 (0.31) —
SCHEMBL5621274 0.61 — —
SCHEMBL6367480 0.61 PTPN1 (0.34) —
SCHEMBL13865302 0.58 — —
SCHEMBL19888508 0.58 ALDH1A1 (0.32) —
SCHEMBL24831854 0.56 CYP19A1 (0.30) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1975705-B1 Positive resist composition and pattern-forming method FUJIFILM CORP (JP) 2016-04-27 — — EP disclosed
EP-2194073-B1 Positive-working photosensitive composition, method for pattern formation using the composition, resin for use in the composition, and monomer. FUJIFILM CORP (JP) 2013-06-05 — — EP disclosed
WO-2013065878-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR CROSSLINKED LAYER FORMATION TO BE USED IN THE METHOD FUJIFILM CORPORATION (JP) 2013-05-10 — — WO disclosed
WO-2012133257-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2012-10-04 — — WO disclosed
WO-2012074122-A1 NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2012-06-07 — — WO disclosed
WO-2012036315-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-22 — — WO disclosed
WO-2012008510-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-19 — — WO disclosed
WO-2011162408-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-12-29 — — WO disclosed
WO-2011149035-A1 PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FUJIFILM CORPORATION (JP) 2011-12-01 — — WO disclosed
EP-1906238-B1 Photosensitive composition and pattern forming method using the same FUJIFILM CORP (JP) 2011-11-09 — — EP disclosed
WO-2011118824-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-09-29 — — WO disclosed
WO-2011108767-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2011-09-09 — — WO disclosed
WO-2011105626-A1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2011-09-01 — — WO disclosed
WO-2011102546-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-08-25 — — WO disclosed
WO-2011087144-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-07-21 — — WO disclosed
WO-2011043481-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-04-14 — — WO disclosed
WO-2011024734-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-03 — — WO disclosed
WO-2010114176-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-10-07 — — WO disclosed
WO-2009113735-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-09-17 — — WO disclosed
EP-1962139-A1 Negative resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-08-27 — — EP disclosed
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