SCHEMBL9924462

SCHEMBL9924462

C[C@H]1C2CCC3C(C2)C(=O)OC31

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CHRM1 P11229 16/20 0.33
CHRM2 P08172 15/20 0.33
CHRM4 P08173 8/20 0.31
CHRM3 P20309 8/20 0.31
CHRM5 P08912 1/20 0.31
F2R P25116 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12014002 1.00 CHRM1 (0.33) CHRM1CHRM2CHRM4CHRM3CHRM5
SCHEMBL9880094 1.00 CHRM1 (0.33) CHRM1CHRM2CHRM4CHRM3CHRM5
SCHEMBL3414661 0.85 CHRM1 (0.32) CHRM1CHRM2
SCHEMBL5526564 0.85 CHRM1 (0.32) CHRM1CHRM2
SCHEMBL10144918 0.85 CHRM1 (0.32) CHRM1CHRM2
SCHEMBL13483877 0.85 CHRM1 (0.32) CHRM1CHRM2
SCHEMBL13937259 0.85 CHRM1 (0.32) CHRM1CHRM2
SCHEMBL18721211 0.85 CHRM1 (0.32) CHRM1CHRM2
SCHEMBL196309 0.84
Water SCHEMBL3314139 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9086628-B2 Resist protective film-forming composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-9086628-B2 Resist protective film-forming composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-8933251-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 US disclosed
US-8933251-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 US disclosed
US-8916331-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-23 US disclosed
US-8916331-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-23 US disclosed
US-8647808-B2 Fluorinated monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-11 US disclosed
US-8647808-B2 Fluorinated monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-11 US disclosed
US-20130231491-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-05 US disclosed
US-20130231491-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-05 US disclosed
US-20100136482-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-03 US disclosed
US-20100112482-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-05-06 US disclosed
US-7592407-B2 a perfluorinated ester compound containing a pyran ring, a hydroxy or protected hydroxy group; able to polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light; alkali development amenability, and dry etch resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-22 US disclosed
US-7592407-B2 a perfluorinated ester compound containing a pyran ring, a hydroxy or protected hydroxy group; able to polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light; alkali development amenability, and dry etch resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-22 US disclosed
US-20090208873-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090208867-A1 Resist Composition, Resist Protective Coating Composition, and Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-7537880-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-26 US disclosed
US-7488567-B2 Polymer, resist composition and patterning process PANASONIC CORPORATION (JP) 2009-02-10 US disclosed
US-20080118860-A1 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-22 US disclosed
EP-1652846-B1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2007-08-22 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100112482-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS ZYX, FOXO1, CAPZA1 CHRM1 456/4885CHRM2 1557/4885CHRM4 3461/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.