SCHEMBL5526564

SCHEMBL5526564

CC1C2CC3C(=O)OC1C3C2

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CHRM1 P11229 2/20 0.32
CHRM2 P08172 1/20 0.32
RECQL P46063 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10144918 1.00 CHRM1 (0.32) CHRM1CHRM2RECQL
SCHEMBL13937259 1.00 CHRM1 (0.32) CHRM1CHRM2RECQL
SCHEMBL3414661 1.00 CHRM1 (0.32) CHRM1CHRM2RECQL
SCHEMBL18721211 1.00 CHRM1 (0.32) CHRM1CHRM2RECQL
SCHEMBL13483877 1.00 CHRM1 (0.32) CHRM1CHRM2RECQL
SCHEMBL12014002 0.85 CHRM1 (0.33) CHRM1CHRM2
SCHEMBL9880094 0.85 CHRM1 (0.33) CHRM1CHRM2
SCHEMBL9924462 0.85 CHRM1 (0.33) CHRM1CHRM2
SCHEMBL9881047 0.84
SCHEMBL21567765 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 341 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-12-12 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-06 US disclosed
US-20230161250-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-25 US disclosed
US-20230152694-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-05-18 US disclosed
US-20230134822-A1 AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed
EP-1795963-A1 Positive resist composition and pattern forming method using the same Fujifilm Corporation (JP) 2007-06-13 EP disclosed
US-20070105045-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION 2007-05-10 US disclosed
US-20070105045-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION 2007-05-10 US disclosed
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-05 US disclosed
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-05 US disclosed
EP-1767992-A1 Positive resist composition for immersion exposure and pattern forming method using the same FUJIFILM Corporation (JP) 2007-03-28 EP disclosed
EP-1764647-A2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed
US-7183036-B2 Low activation energy positive resist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-02-27 US disclosed
EP-1754999-A2 Positive resist composition and method of pattern formation with the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 CHRM1 932/4885CHRM2 1478/4885RECQL 2572/4885
US-20230161250-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RIMKLA, GAR1, PCCA CHRM1 2323/4885CHRM2 2845/4885RECQL 2735/4885
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound RB1, RBBP5, RRM2B CHRM1 2067/4885CHRM2 1628/4885RECQL 245/4885
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN4, HCN3, HCN1 CHRM1 1555/4885CHRM2 1996/4885RECQL 806/4885
US-20230134822-A1 AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS GFER, GNMT, DNER CHRM1 2624/4885CHRM2 2592/4885RECQL 3335/4885
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, H1-0, CA7 CHRM1 7/4885CHRM2 15/4885RECQL 1954/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.