⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15084174 | 1.00 | — | — | |
| SCHEMBL13178003 | 0.90 | — | — | |
| SCHEMBL10070923 | 0.89 | — | — | |
| SCHEMBL12705194 | 0.89 | — | — | |
| SCHEMBL13206568 | 0.89 | — | — | |
| SCHEMBL17680408 | 0.87 | — | — | |
| SCHEMBL112073 | 0.87 | HMGCR (0.33) | — | |
| SCHEMBL13206571 | 0.87 | — | — | |
| SCHEMBL20171477 | 0.87 | — | — | |
| SCHEMBL19052033 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914300-B2 | Manufacturing method of semiconductor chip, and kit | FUJIFILM CORPORATION (JP) | 2024-02-27 | — | — | US | disclosed |
| WO-2023008354-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| WO-2019187804-A1 | ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND POLYESTER | 富士フイルム株式会社 | 2019-10-03 | — | — | WO | disclosed |
| US-20190258168-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2019-08-22 | — | — | US | disclosed |
| US-20180217503-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180217499-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180217503-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-9645490-B2 | Salt, acid generator, photoresist composition, and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9557641-B2 | Photoresist composition, resist pattern-forming method, acid diffusion control agent, and compound | JSR CORPORATION (JP) | 2017-01-31 | — | — | US | disclosed |
| US-9557641-B2 | Photoresist composition, resist pattern-forming method, acid diffusion control agent, and compound | JSR CORPORATION (JP) | 2017-01-31 | — | — | US | disclosed |
| US-8101341-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-20110244394-A1 | METHOD FOR PRODUCING RESIN SOLUTION FOR PHOTORESIST, PHOTORESIST COMPOSITION, AND PATTERN-FORMING METHOD | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2011-10-06 | — | — | US | disclosed |
| US-20110223544-A1 | RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME | JSR CORPORATION (JP) | 2011-09-15 | — | — | US | disclosed |
| US-7914965-B2 | Resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2011-03-29 | — | — | US | disclosed |
| US-20100323292-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20100310988-A1 | RESIST PATTERN-FORMING METHOD AND RESIST PATTERN MINIATURIZING RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-12-09 | — | — | US | disclosed |
| US-20100178617-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-15 | — | — | US | disclosed |
| US-7514201-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-04-07 | — | — | US | disclosed |
| US-7488569-B2 | Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device | FUJITSU LIMITED (JP) | 2009-02-10 | — | — | US | disclosed |
| EP-1491560-B1 | PROCESS FOR THE PRODUCTION OF HIGH-MOLECULAR COMPOUNDS FOR PHOTORESIST | DAICEL CHEM (JP) | 2007-11-21 | — | — | EP | disclosed |