SCHEMBL9966140

SCHEMBL9966140

COC(=O)c1ccc(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O)cc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
STS P08842 1/20 0.55
RAB9A P51151 2/20 0.52
CA1 P00915 3/20 0.47
CA2 P00918 3/20 0.47
LMNA P02545 2/20 0.45
ALDH1A1 P00352 2/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
MAPT P10636 3/20 0.44
ACR P10323 1/20 0.42
CA12 O43570 2/20 0.41
CA9 Q16790 2/20 0.41
CA14 Q9ULX7 2/20 0.41
TDP1 Q9NUW8 1/20 0.41
CA7 P43166 1/20 0.41
EGFR P00533 1/20 0.41
LOXL2 Q9Y4K0 1/20 0.41
KMT2A Q03164 2/20 0.40
HPGD P15428 2/20 0.40
KDM4E B2RXH2 1/20 0.40
MEN1 O00255 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25470385 0.87 STS (0.39) STSRAB9ALMNAALDH1A1SMN1; SMN2
SCHEMBL9966129 0.84 STS (0.50) STSRAB9ACA1CA2LMNA
SCHEMBL9966114 0.84 KMT2A (0.43) STSRAB9ACA1CA2ALDH1A1
SCHEMBL1928327 0.82 STS (0.65) STSRAB9ACA1CA2LMNA
SCHEMBL18219812 0.81 STS (0.51) STSRAB9ALMNAALDH1A1SMN1; SMN2
SCHEMBL23808361 0.81 ENPP1 (0.36) STSRAB9ACA1CA2ALDH1A1
SCHEMBL9966117 0.80 CA1 (0.46) CA1CA2LMNASMN1; SMN2CA12
SCHEMBL13136802 0.80 STS (0.38) STSRAB9ACA1CA2CA12
SCHEMBL9963736 0.80 STS (0.38) STSRAB9ACA1CA2SMN1; SMN2
SCHEMBL25467901 0.78 CXCR2 (0.34) STSRAB9ACA1CA2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8808975-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-20120156618-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-06-21 US disclosed
US-20120082939-A1 ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-05 US disclosed
US-20100310991-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-09 US disclosed
US-7803511-B2 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJIFILM CORPORATION (JP) 2010-09-28 US disclosed
US-20070212645-A1 Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-09-13 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed