Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 5/20 | 0.34 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.30 |
| ▸ | USP2 | O75604 | 2/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.30 |
| ▸ | TSHR | P16473 | 2/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.30 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.30 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.30 |
| ▸ | PGR | P06401 | 1/20 | 0.30 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.30 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.30 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.30 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.30 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.30 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.30 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.30 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.30 |
| ▸ | DRD1 | P21728 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12667237 | 0.89 | — | — | |
| SCHEMBL18845380 | 0.88 | — | — | |
| SCHEMBL14924187 | 0.88 | L3MBTL1 (0.30) | — | |
| SCHEMBL16001867 | 0.86 | HMGCR (0.34) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL9945802 | 0.84 | HMGCR (0.35) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL12203422 | 0.83 | HMGCR (0.34) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL2754976 | 0.83 | HMGCR (0.34) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL9973372 | 0.83 | HMGCR (0.34) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL10228568 | 0.82 | HMGCR (0.32) | HMGCR | |
| SCHEMBL19058052 | 0.82 | HMGCR (0.32) | HMGCR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 344 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230137472-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-10591819-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-03-17 | — | — | US | disclosed |
| US-20190235381-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-08-01 | — | — | US | disclosed |
| US-10025186-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018913-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9996003-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-06-12 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20180120706-A1 | PATTERN FORMING METHOD, LAMINATE, AND RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9952509-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-04-24 | — | — | US | disclosed |
| US-20090233223-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-17 | — | — | US | disclosed |
| US-7569326-B2 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20090042147-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090035699-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20080318171-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2008-12-25 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20070269741-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2007-11-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | HMGCR 346/4885CYP3A4 986/4885USP2 4156/4885 |
| US-20090035699-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | C1R, AFF1, HRH3 | HMGCR 2465/4885CYP3A4 1906/4885USP2 3267/4885 |
| US-20190235381-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-2, H1-0, H1-4 | HMGCR 4215/4885CYP3A4 3729/4885USP2 2933/4885 |
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | HAAO, HPD, IL4 | HMGCR 256/4885CYP3A4 111/4885USP2 1614/4885 |
| US-10591819-B2 | Monomer, polymer, resist composition, and patterning process | H1-2, H1-0, H1-4 | HMGCR 3873/4885CYP3A4 3480/4885USP2 3121/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.