SCHEMBL9976286

SCHEMBL9976286

CCCCC(C)(O)C(F)(F)F

nearest known ligand 0.38

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CES1 P23141 14/20 0.38
CES2 O00748 2/20 0.35
LPAR1 Q92633 1/20 0.35
LPAR3 Q9UBY5 1/20 0.35
FAAH O00519 8/20 0.34
MEN1 O00255 1/20 0.33
CYP1A2 P05177 1/20 0.33
KMT2A Q03164 1/20 0.33
HSD17B10 Q99714 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25948178 1.00 CES1 (0.38) CES1CES2LPAR1LPAR3FAAH
SCHEMBL30156510 1.00 CES1 (0.38) CES1CES2LPAR1LPAR3FAAH
SCHEMBL493979 0.92 CES2 (0.43) CES1CES2LPAR1LPAR3
SCHEMBL21087422 0.90 CES2 (0.47) CES1CES2LPAR1LPAR3
SCHEMBL13684033 0.90 CES2 (0.47) CES1CES2LPAR1LPAR3
SCHEMBL11990032 0.83 ALDH1A1 (0.35) CES1
SCHEMBL11990036 0.83 ALDH1A1 (0.35) CES1
SCHEMBL92887 0.83 ALDH1A1 (0.35) CES1
SCHEMBL22624064 0.81 CES1 (0.33) CES1CES2LPAR1LPAR3FAAH
SCHEMBL5857345 0.80 ALDH1A1 (0.41)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8916978-B2 Interconnect structure and method of fabricating INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-12-23 US disclosed
US-8487411-B2 Multiple patterning using improved patternable low-κ dielectric materials INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-07-16 US disclosed
US-8475667-B2 Method of patterning photosensitive material on a substrate containing a latent acid generator INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-07-02 US disclosed
US-8470516-B2 Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-06-25 US disclosed
US-8461039-B2 Patternable low-K dielectric interconnect structure with a graded cap layer and method of fabrication INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-06-11 US disclosed
US-8415248-B2 Self-aligned dual damascene BEOL structures with patternable low-k material and methods of forming same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-04-09 US disclosed
US-20130009323-A1 INTERCONNECT STRUCTURE AND METHOD OF FABRICATING INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-01-10 US disclosed
US-20120252204-A1 PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-10-04 US disclosed
US-20120231622-A1 SELF-ALIGNED DUAL DAMASCENE BEOL STRUCTURES WITH PATTERNABLE LOW- K MATERIAL AND METHODS OF FORMING SAME INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-13 US disclosed
US-20120161296-A1 MULTIPLE PATTERNING USING IMPROVED PATTERNABLE LOW-k DIELECTRIC MATERIALS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-06-28 US disclosed
US-8202783-B2 Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-06-19 US disclosed
US-20110074044-A1 PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-03-31 US disclosed
US-20110045387-A1 Method of Forming a Relief Pattern by E-Beam Lithography Using Chemical Amplification, and Derived Articles INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-02-24 US disclosed