SCHEMBL10058071

SCHEMBL10058071

c1ccc(-c2ccc(-c3ccc4oc5ccc6c(-c7ccc(-c8ccccc8)cc7)ccc7oc8ccc3c4c8-c5c76)cc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
WEE1 P30291 1/20 0.40
PGR P06401 1/20 0.35
AKR1B1 P15121 2/20 0.35
MAOB P27338 2/20 0.35
CA12 O43570 1/20 0.35
ALDH2 P05091 1/20 0.35
MAOA P21397 1/20 0.35
HSD17B3 P37058 1/20 0.35
SORD Q00796 1/20 0.35
CA9 Q16790 1/20 0.35
CYP1A1 P04798 1/20 0.35
CYP1A2 P05177 1/20 0.35
CYP1B1 Q16678 1/20 0.35
CTRC Q99895 2/20 0.34
KMT2A Q03164 3/20 0.34
KDM4E B2RXH2 3/20 0.34
GAA P10253 2/20 0.34
PLA2G2A P14555 2/20 0.34
PLA2G4A P47712 2/20 0.34
MEN1 O00255 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10028111 0.96 WEE1 (0.42) WEE1AKR1B1MAOBCA12ALDH2
SCHEMBL10028198 0.94 WEE1 (0.41) WEE1AKR1B1MAOBCA12ALDH2
SCHEMBL10028109 0.87 WEE1 (0.40) WEE1AKR1B1MAOBCA12ALDH2
SCHEMBL10058056 0.81 MAOB (0.40) MAOBCA12MAOACA9KDM4E
SCHEMBL18159553 0.81 PLA2G2A (0.37) WEE1AKR1B1MAOBCA12MAOA
SCHEMBL10028107 0.80 GSTP1 (0.44) PGRCYP1A1CYP1A2CYP1B1KDM4E
SCHEMBL16639348 0.79
SCHEMBL30139616 0.79 CDC14B (0.43) WEE1CA12MAOACA9CYP1B1
SCHEMBL16801040 0.79 PARP1 (0.38) WEE1AKR1B1MAOBCA12MAOA
SCHEMBL12831338 0.77 NOTUM (0.34) KMT2AKDM4EMEN1MAPTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9711737-B2 Photoelectric conversion element and solid-state imaging device SONY CORPORATION (JP) 2017-07-18 US disclosed
US-9711737-B2 Photoelectric conversion element and solid-state imaging device SONY CORPORATION (JP) 2017-07-18 US disclosed
US-20160049595-A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE SONY CORPORATION (JP) 2016-02-18 US disclosed
US-20160049595-A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE SONY CORPORATION (JP) 2016-02-18 US disclosed
US-9123901-B2 Photoelectric conversion element and solid-state imaging device SONY CORPORATION (JP) 2015-09-01 US disclosed
US-9123901-B2 Photoelectric conversion element and solid-state imaging device SONY CORPORATION (JP) 2015-09-01 US disclosed
US-8546796-B2 Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film SONY CORPORATION (JP) 2013-10-01 US disclosed
US-8546796-B2 Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film SONY CORPORATION (JP) 2013-10-01 US disclosed
US-20130200343-A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM SONY CORPORATION (JP) 2013-08-08 US disclosed
US-20130200343-A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM SONY CORPORATION (JP) 2013-08-08 US disclosed
US-20130099225-A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE SONY CORPORATION (JP) 2013-04-25 US disclosed
US-20130099225-A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE SONY CORPORATION (JP) 2013-04-25 US disclosed
US-8399288-B2 Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film SONY CORPORATION (JP) 2013-03-19 US disclosed
US-8399288-B2 Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film SONY CORPORATION (JP) 2013-03-19 US disclosed
US-20120025173-A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM SONY CORPORATION (JP) 2012-02-02 US disclosed
US-20120025173-A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM SONY CORPORATION (JP) 2012-02-02 US disclosed
US-20090289248-A1 DIOXAANTHANTHRENE COMPOUND AND SEMICONDUCTOR DEVICE SONY CORPORATION (JP) 2009-11-26 US disclosed
US-20090289248-A1 DIOXAANTHANTHRENE COMPOUND AND SEMICONDUCTOR DEVICE SONY CORPORATION (JP) 2009-11-26 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090289248-A1 DIOXAANTHANTHRENE COMPOUND AND SEMICONDUCTOR DEVICE DDT, DHX9, DHX29 WEE1 1375/4885PGR 504/4885AKR1B1 3939/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.