⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13028472 | 0.87 | — | — | |
| SCHEMBL10183363 | 0.80 | — | — | |
| SCHEMBL12263837 | 0.79 | — | — | |
| SCHEMBL795757 | 0.78 | TSHR (0.34) | — | |
| SCHEMBL97352 | 0.77 | — | — | |
| SCHEMBL2681162 | 0.77 | — | — | |
| SCHEMBL12753377 | 0.77 | — | — | |
| SCHEMBL17717733 | 0.74 | MMP8 (0.33) | — | |
| SCHEMBL800008 | 0.73 | MMP8 (0.32) | — | |
| SCHEMBL13520507 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9720322-B2 | Photoresist composition, compound, and production method thereof | JSR CORPORATION (JP) | 2017-08-01 | — | — | US | disclosed |
| US-9529259-B2 | Radiation-sensitive resin composition, resist pattern-forming method, acid diffusion control agent, compound, and method for producing compound | JSR CORPORATION (JP) | 2016-12-27 | — | — | US | disclosed |
| US-20160370700-A1 | PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF | JSR CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-9477149-B2 | Photoresist composition, compound, and production method thereof | JSR CORPORATION (JP) | 2016-10-25 | — | — | US | disclosed |
| US-9423692-B2 | Composition for forming resist protection film for lithography and method for forming pattern of semiconductor device using the same | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-08-23 | — | — | US | disclosed |
| US-9304393-B2 | Radiation-sensitive resin composition and compound | JSR CORPORATION (JP) | 2016-04-05 | — | — | US | disclosed |
| US-20160004159-A1 | COMPOSITION FOR FORMING RESIST PROTECTION FILM FOR LITHOGRAPHY AND METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-01-07 | — | — | US | disclosed |
| US-20150355539-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, COMPOUND, AND METHOD FOR PRODUCING COMPOUND | JSR CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| US-9046765-B2 | Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20150004545-A1 | PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF | JSR CORPORATION (JP) | 2015-01-01 | — | — | US | disclosed |
| US-20140023968-A1 | RESIST PATTERN-FORMING METHOD, RESIST PATTERN-FORMING RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM | JSR CORPORATION (JP) | 2014-01-23 | — | — | US | disclosed |
| US-20130288179-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND | JSR CORPORATION (JP) | 2013-10-31 | — | — | US | disclosed |
| US-20120082935-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FORMED USING THE SAME | JSR CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |