SCHEMBL10064084

SCHEMBL10064084

OC1(C(F)(F)F)C2CCC(O2)C1(F)F

nearest known ligand 0.30

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 2/20 0.30
TP53 P04637 1/20 0.30
NFKB1 P19838 1/20 0.30
CYP2C19 P33261 1/20 0.30
THPO P40225 1/20 0.30
STAT6 P42226 1/20 0.30
HIF1A Q16665 1/20 0.30
NPC1 O15118 1/20 0.30
GMNN O75496 1/20 0.30
LMNA P02545 1/20 0.30
MTOR P42345 1/20 0.30
RAB9A P51151 1/20 0.30
BLM P54132 1/20 0.30
PMP22 Q01453 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14559896 0.72 MAPK1 (0.34) MAPK1TP53NFKB1CYP2C19THPO
SCHEMBL9908402 0.70 MAPK1 (0.34) MAPK1TP53NFKB1CYP2C19THPO
SCHEMBL10201812 0.68
SCHEMBL9965148 0.68
SCHEMBL14178775 0.68
SCHEMBL10064086 0.65
SCHEMBL14252167 0.63
SCHEMBL14448403 0.62
SCHEMBL9908403 0.62 MAPK1 (0.39) MAPK1TP53NFKB1CYP2C19THPO
SCHEMBL885544 0.61 HTT (0.30) CYP2C19LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9488914-B2 Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-11-08 US disclosed
US-9488914-B2 Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-11-08 US disclosed
US-9429846-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-30 US disclosed
US-20160202612-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-07-14 US disclosed
US-20150198879-A1 Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-07-16 US disclosed
US-20150198879-A1 Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-07-16 US disclosed
US-20150086929-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-26 US disclosed
US-8741554-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-03 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed
US-7332616-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
US-7332616-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
US-20070185226-A1 NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-09 US disclosed
US-20070185226-A1 NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-09 US disclosed
US-7232641-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-7232641-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150198879-A1 Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same RER1, SMARCC1, SMCHD1 MAPK1 821/4885TP53 3085/4885NFKB1 3694/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.