SCHEMBL10067100

SCHEMBL10067100

O=C(OCCS(=O)(=O)O)c1cccc2ccccc12

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HRH3 Q9Y5N1 2/20 0.52
CDC25B P30305 2/20 0.51
POLB P06746 1/20 0.50
GAA P10253 1/20 0.50
KMT2A Q03164 1/20 0.50
DRD3 P35462 1/20 0.49
ALDH1A1 P00352 6/20 0.48
KDM4E B2RXH2 5/20 0.48
ADRB2 P07550 2/20 0.47
ADRB1 P08588 2/20 0.47
ADRB3 P13945 2/20 0.47
CACNA1B Q00975 2/20 0.46
APBA1 Q02410 2/20 0.46
NR4A1 P22736 1/20 0.46
NR4A2 P43354 1/20 0.46
NR4A3 Q92570 1/20 0.46
HPGD P15428 4/20 0.45
MAPT P10636 1/20 0.45
PTPN1 P18031 1/20 0.45
CDC25A P30304 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13310415 0.91 HRH3 (0.56) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL13310431 0.90 HRH3 (0.55) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL786986 0.85 CDC25B (0.61) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL25476251 0.84 KMT2A (0.48) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL19756082 0.84 KMT2A (0.48) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL27627929 0.83 NR4A1 (0.41) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL25528022 0.83 KMT2A (0.47) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL7137986 0.82 HRH3 (0.66) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL27540941 0.82 HRH3 (0.66) HRH3CDC25BPOLBGAAKMT2A
SCHEMBL29534446 0.81 HRH3 (0.57) HRH3CDC25BPOLBGAAKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11366386-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-06-21 US disclosed
US-11231649-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-25 US disclosed
US-10844257-B2 Adhesive composition, bio-electrode, and method for manufacturing a bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-11-24 US disclosed
US-10808148-B2 Adhesive composition, bio-electrode, method for manufacturing a bio-electrode, and salt SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-20 US disclosed
US-20190354016-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-20190354017-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-20190258160-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-22 US disclosed
US-20180086948-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING A BIO-ELECTRODE, AND SALT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 US disclosed
US-20180086948-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING A BIO-ELECTRODE, AND SALT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 US disclosed
US-20180072930-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, AND METHOD FOR MANUFACTURING A BIO-ELECTRODE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-15 US disclosed
US-9436093-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-06 US disclosed
US-20160124312-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-05 US disclosed
US-20160124312-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-05 US disclosed
US-8748076-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-10 US disclosed
US-8748076-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-10 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-20120196228-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-02 US disclosed
US-20120164577-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-28 US disclosed
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10808148-B2 Adhesive composition, bio-electrode, method for manufacturing a bio-electrode, and salt SLC9A1, FN1, EPCAM HRH3 364/4885CDC25B 4795/4885POLB 3560/4885
US-11366386-B2 Patterning process FEM1B, EGLN1, TET1 HRH3 562/4885CDC25B 2523/4885POLB 1349/4885
US-20180086948-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING A BIO-ELECTRODE, AND SALT SLC9A1, FN1, EPCAM HRH3 374/4885CDC25B 4781/4885POLB 3653/4885
US-20190354017-A1 PATTERNING PROCESS FEM1B, EGLN1, TET1 HRH3 562/4885CDC25B 2523/4885POLB 1349/4885
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS TYK2, VRK2, ARSA HRH3 2115/4885CDC25B 1087/4885POLB 1130/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.