Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 17/20 | 0.40 |
| ▸ | HSD11B2 | P80365 | 2/20 | 0.37 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10150666 | 0.82 | — | — | |
| SCHEMBL12932438 | 0.81 | HSD11B1 (0.40) | HSD11B1HSD11B2 | |
| SCHEMBL18826686 | 0.79 | ATM (0.35) | HSD11B1HSD11B2 | |
| SCHEMBL2636721 | 0.79 | HSD11B1 (0.44) | HSD11B1HSD11B2EPHX2 | |
| SCHEMBL12791827 | 0.79 | HSD11B1 (0.44) | HSD11B1HSD11B2EPHX2 | |
| SCHEMBL333419 | 0.78 | HSD11B1 (0.46) | HSD11B1EPHX2 | |
| SCHEMBL8099017 | 0.77 | HSD11B1 (0.44) | HSD11B1HSD11B2EPHX2 | |
| SCHEMBL3033655 | 0.77 | HSD11B1 (0.42) | HSD11B1HSD11B2EPHX2 | |
| SCHEMBL1592363 | 0.76 | TSHR (0.33) | HSD11B1 | |
| SCHEMBL3218526 | 0.75 | HSD11B1 (0.41) | HSD11B1HSD11B2EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8378016-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2013-02-19 | — | — | US | disclosed |
| US-8378016-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2013-02-19 | — | — | US | disclosed |
| US-8192914-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-05 | — | — | US | disclosed |
| US-8192914-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-05 | — | — | US | disclosed |
| US-20110165519-A1 | RESIN SUITABLE FOR AN ACID GENERATOR AND A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION CONTAINING THE SAME | ANDO NOBUO | 2011-07-07 | — | — | US | disclosed |
| US-20110165519-A1 | RESIN SUITABLE FOR AN ACID GENERATOR AND A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION CONTAINING THE SAME | ANDO NOBUO | 2011-07-07 | — | — | US | disclosed |
| US-7638261-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-12-29 | — | — | US | disclosed |
| US-7638261-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-12-29 | — | — | US | disclosed |
| US-20090148790-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090148790-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-7510817-B2 | Photoresist polymer compositions | JSR CORPORATION (JP) | 2009-03-31 | — | — | US | disclosed |
| US-7510817-B2 | Photoresist polymer compositions | JSR CORPORATION (JP) | 2009-03-31 | — | — | US | disclosed |
| US-7250475-B2 | Free radical addition polymerization of adamantyl (meth)acrylate derivates using a chain transfer agent comprising N-aminodithiocarbamate derivative; patterning semiconductor wafers; lithographic transfer of image from thin film of photosensitive resist material | SYMYX TECHNOLOGIES, INC. (US) | 2007-07-31 | — | — | US | disclosed |
| US-7250475-B2 | Free radical addition polymerization of adamantyl (meth)acrylate derivates using a chain transfer agent comprising N-aminodithiocarbamate derivative; patterning semiconductor wafers; lithographic transfer of image from thin film of photosensitive resist material | SYMYX TECHNOLOGIES, INC. (US) | 2007-07-31 | — | — | US | disclosed |
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |