Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NAAA | Q02083 | 1/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.43 |
| ▸ | FAAH | O00519 | 2/20 | 0.41 |
| ▸ | RAD52 | P43351 | 1/20 | 0.39 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.39 |
| ▸ | CA12 | O43570 | 2/20 | 0.38 |
| ▸ | CA1 | P00915 | 2/20 | 0.38 |
| ▸ | CA2 | P00918 | 2/20 | 0.38 |
| ▸ | CA7 | P43166 | 2/20 | 0.38 |
| ▸ | CA13 | Q8N1Q1 | 2/20 | 0.38 |
| ▸ | CA9 | Q16790 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | ESR1 | P03372 | 1/20 | 0.38 |
| ▸ | HTR2C | P28335 | 1/20 | 0.38 |
| ▸ | DGKA | P23743 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12172747 | 0.79 | CA2 (0.53) | CA12CA1CA2CA7CA13 | |
| SCHEMBL16313656 | 0.79 | CA2 (0.53) | CA12CA1CA2CA7CA13 | |
| SCHEMBL10172873 | 0.79 | CA2 (0.53) | CA12CA1CA2CA7CA13 | |
| SCHEMBL112773 | 0.79 | CA2 (0.53) | CA12CA1CA2CA7CA13 | |
| SCHEMBL2611770 | 0.79 | CA2 (0.53) | CA12CA1CA2CA7CA13 | |
| SCHEMBL12689958 | 0.79 | CA2 (0.53) | CA12CA1CA2CA7CA13 | |
| SCHEMBL14353367 | 0.73 | NAAA (0.67) | NAAASMN1; SMN2FAAHRAD52NPSR1 | |
| SCHEMBL14353318 | 0.73 | NAAA (0.67) | NAAASMN1; SMN2FAAHRAD52NPSR1 | |
| SCHEMBL19812459 | 0.73 | NAAA (0.67) | NAAASMN1; SMN2FAAHRAD52NPSR1 | |
| SCHEMBL19812438 | 0.73 | NAAA (0.67) | NAAASMN1; SMN2FAAHRAD52NPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170059992-A1 | RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-20170059992-A1 | RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-9046782-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046782-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| EP-2353048-B1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORP (JP) | 2015-02-25 | — | — | EP | disclosed |
| US-8709704-B2 | Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method | FUJIFILM CORPORATION (JP) | 2014-04-29 | — | — | US | disclosed |
| US-8709704-B2 | Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method | FUJIFILM CORPORATION (JP) | 2014-04-29 | — | — | US | disclosed |
| US-8343708-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2013-01-01 | — | — | US | disclosed |
| US-8343708-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2013-01-01 | — | — | US | disclosed |
| US-20120034564-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |
| US-20100112477-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-05-06 | — | — | US | disclosed |
| US-20100112477-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-05-06 | — | — | US | disclosed |
| US-7666574-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2010-02-23 | — | — | US | disclosed |
| US-7666574-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2010-02-23 | — | — | US | disclosed |
| US-7635554-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2009-12-22 | — | — | US | disclosed |
| US-7635554-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2009-12-22 | — | — | US | disclosed |
| US-20080248421-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248421-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |