SCHEMBL10172873

SCHEMBL10172873

CCCCCCCCSc1c(F)c(F)c(S(=O)(=O)O)c(F)c1F

nearest known ligand 0.53

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CA2 P00918 8/20 0.53
CA12 O43570 7/20 0.53
CA1 P00915 7/20 0.53
CA7 P43166 7/20 0.53
CA13 Q8N1Q1 7/20 0.53
CA9 Q16790 4/20 0.53
CA4 P22748 2/20 0.45
CA6 P23280 2/20 0.45
CA5A P35218 2/20 0.45
CA14 Q9ULX7 2/20 0.45
CA5B Q9Y2D0 2/20 0.45
CA3 P07451 1/20 0.45
HAO1 Q9UJM8 1/20 0.34
SOAT1 P35610 8/20 0.33
G6PD P11413 1/20 0.33
GPR84 Q9NQS5 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL112773 1.00 CA2 (0.53) CA2CA12CA1CA7CA13
SCHEMBL12172747 1.00 CA2 (0.53) CA2CA12CA1CA7CA13
SCHEMBL2611770 1.00 CA2 (0.53) CA2CA12CA1CA7CA13
SCHEMBL12689958 1.00 CA2 (0.53) CA2CA12CA1CA7CA13
SCHEMBL16313656 1.00 CA2 (0.53) CA2CA12CA1CA7CA13
SCHEMBL14407722 0.79 CA1 (0.49) CA2CA12CA1CA7CA13
SCHEMBL10087731 0.79 NAAA (0.44) CA2CA12CA1CA7CA13
SCHEMBL13713661 0.79 CA12 (0.38) CA2CA12CA1CA7CA13
SCHEMBL13713641 0.78 CA12 (0.38) CA2CA12CA1CA7CA13
SCHEMBL13713660 0.77 CA12 (0.37) CA2CA12CA1CA7CA13

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9046782-B2 Resist composition for negative tone development and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-06-02 US disclosed
US-8999622-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 US disclosed
US-8808965-B2 Pattern forming method, pattern, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-20140205947-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2014-07-24 US disclosed
US-8722319-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-05-13 US disclosed
US-20130115556-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-05-09 US disclosed
US-20120077122-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-03-29 US disclosed
US-8034537-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2011-10-11 US disclosed
US-20100190106-A1 RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-29 US disclosed
US-20100112477-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-05-06 US disclosed
US-7666574-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2010-02-23 US disclosed
US-7635554-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2009-12-22 US disclosed
US-20080248421-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080241746-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed