SCHEMBL10101739

SCHEMBL10101739

O=S(=O)(O)CC(F)(F)CC(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10002102 0.83 TSHR (0.35)
SCHEMBL14133213 0.80
SCHEMBL29433272 0.77 TSHR (0.35)
SCHEMBL64334 0.77
SCHEMBL17407784 0.77
SCHEMBL19326832 0.76 ALDH1A1 (0.31)
Ammonia Solution, Strong SCHEMBL2512351 0.75 ALDH1A1 (0.33)
Hydrochloric Acid SCHEMBL10696594 0.75 ALDH1A1 (0.33)
SCHEMBL2754981 0.74 CES1 (0.31)
SCHEMBL5500329 0.74 LMNA (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9594303-B2 Resist pattern-forming method and photoresist composition JSR CORPORATION (JP) 2017-03-14 US disclosed
US-20150010866-A1 RESIST PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION JSR CORPORATION (JP) 2015-01-08 US disclosed
US-8580480-B2 Radiation-sensitive resin composition, method for forming resist pattern, polymer and compound JSR CORPORATION (JP) 2013-11-12 US disclosed
US-20120028189-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-02-02 US disclosed