⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL25631131 | 0.92 | — | — | |
| SCHEMBL18198980 | 0.90 | — | — | |
| SCHEMBL13481201 | 0.85 | — | — | |
| SCHEMBL25631128 | 0.84 | — | — | |
| SCHEMBL12110026 | 0.83 | — | — | |
| SCHEMBL107795 | 0.83 | — | — | |
| SCHEMBL26009259 | 0.83 | — | — | |
| SCHEMBL13995695 | 0.83 | RIPK1 (0.31) | — | |
| SCHEMBL10115635 | 0.83 | — | — | |
| SCHEMBL17708341 | 0.82 | DGAT1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 61 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-20170123318-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-9551928-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9541831-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-01-10 | — | — | US | disclosed |
| US-20160320699-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9312127-B2 | Method for producing semiconductor apparatus substrate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-12 | — | — | US | disclosed |
| US-20160064220-A1 | METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-03 | — | — | US | disclosed |
| US-20090239176-A1 | RESIN FOR HYDROPHOBITIZING RESIST SURFACE, METHOD FOR MANUFACTURING THE RESIN, AND POSITIVE RESIST COMPOSITION CONTAINING THE RESIN | FUJIFILM CORPORATION (JP) | 2009-09-24 | — | — | US | disclosed |
| US-20090123880-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-05-14 | — | — | US | disclosed |
| US-20080305433-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2008-12-11 | — | — | US | disclosed |
| US-20080305432-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-12-11 | — | — | US | disclosed |
| US-20080292989-A1 | POSITIVE WORKING PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080261150-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-23 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-7368220-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2008-05-06 | — | — | US | disclosed |
| US-20070178405-A1 | Positive resist composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070148589-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |