Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13059563 | 0.88 | ELANE (0.47) | ELANE | |
| SCHEMBL15495793 | 0.86 | ELANE (0.50) | ELANE | |
| SCHEMBL12108423 | 0.85 | ELANE (0.37) | HSD11B1ELANE | |
| SCHEMBL14747377 | 0.84 | ELANE (0.51) | ELANE | |
| SCHEMBL25596226 | 0.83 | FAAH (0.39) | HSD11B1ELANE | |
| SCHEMBL27428780 | 0.83 | ELANE (0.50) | ELANE | |
| SCHEMBL15179672 | 0.83 | ELANE (0.50) | ELANE | |
| SCHEMBL107059 | 0.82 | ELANE (0.53) | ELANE | |
| SCHEMBL12691185 | 0.81 | ELANE (0.56) | ELANE | |
| SCHEMBL9608718 | 0.81 | HSD11B1 (0.41) | HSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11681224-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-06-20 | — | — | US | disclosed |
| US-9969829-B2 | Polymer compound, negative resist composition, laminate, patterning process, and compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9927708-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9904172-B2 | Shrink material and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170210836-A1 | POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-27 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9645493-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-20170123318-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-20160161850-A1 | SHRINK MATERIAL AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-09 | — | — | US | disclosed |
| US-9312127-B2 | Method for producing semiconductor apparatus substrate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-12 | — | — | US | disclosed |
| US-20160064220-A1 | METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-03 | — | — | US | disclosed |
| US-9244348-B2 | Chemically amplified negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-20150185609-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2015-07-02 | — | — | US | disclosed |
| US-9057952-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2015-06-16 | — | — | US | disclosed |
| US-8802349-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and resist film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-08-12 | — | — | US | disclosed |
| US-20130209922-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2013-08-15 | — | — | US | disclosed |
| US-20120115085-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2012-05-10 | — | — | US | disclosed |
| US-20120015301-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-2, H1-0, H1-4 | HSD11B1 2220/4885ELANE 3192/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.