Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ELANE | P08246 | 13/20 | 0.51 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.39 |
| ▸ | BCHE | P06276 | 2/20 | 0.39 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.39 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27428780 | 0.88 | ELANE (0.50) | ELANETDP1MAPTL3MBTL1BCHE | |
| SCHEMBL15179672 | 0.88 | ELANE (0.50) | ELANETDP1MAPTL3MBTL1BCHE | |
| SCHEMBL107059 | 0.88 | ELANE (0.53) | ELANETDP1MAPTL3MBTL1MEN1 | |
| SCHEMBL17809598 | 0.86 | ELANE (0.42) | ELANEL3MBTL1 | |
| SCHEMBL15179661 | 0.85 | ELANE (0.59) | ELANETDP1MAPTL3MBTL1BCHE | |
| SCHEMBL15495793 | 0.85 | ELANE (0.50) | ELANE | |
| SCHEMBL12737001 | 0.84 | ELANE (0.56) | ELANETDP1KMT2ASMN1; SMN2 | |
| SCHEMBL13059563 | 0.84 | ELANE (0.47) | ELANESMN1; SMN2 | |
| SCHEMBL19164737 | 0.84 | ELANE (0.47) | ELANETDP1MAPTL3MBTL1BCHE | |
| SCHEMBL10115670 | 0.84 | HSD11B1 (0.48) | ELANE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-9971245-B2 | Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9904169-B2 | Photomask blank, resist pattern forming process, and method for making photomask | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9645493-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-20170121437-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9632417-B2 | Shrink material and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160299430-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160299431-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160229939-A1 | SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-11 | — | — | US | disclosed |
| US-20160161851-A1 | SHRINK MATERIAL AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-09 | — | — | US | disclosed |
| US-9244348-B2 | Chemically amplified negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-20130209922-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2013-08-15 | — | — | US | disclosed |
| US-8389200-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2013-03-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | ELANE 2693/4885TDP1 3880/4885MAPT 3178/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.