SCHEMBL10115724

SCHEMBL10115724

CCC(C)(C(=O)OC(C)(C1CCCCC1)C(F)(F)F)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
PDK1 Q15118 1/20 0.33
PDK2 Q15119 1/20 0.33
PDK3 Q15120 1/20 0.33
PDK4 Q16654 1/20 0.33
CHRM2 P08172 3/20 0.32
CHRM4 P08173 3/20 0.32
CHRM1 P11229 3/20 0.32
CHRM3 P20309 3/20 0.32
HSD11B1 P28845 1/20 0.30
ALDH1A1 P00352 1/20 0.30
MAPT P10636 1/20 0.30
RECQL P46063 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10243718 0.86 PDK1 (0.34) PDK1PDK2PDK3PDK4CHRM2
SCHEMBL10115704 0.86 PDK1 (0.34) PDK1PDK2PDK3PDK4CHRM2
SCHEMBL10115796 0.86 PDK1 (0.34) PDK1PDK2PDK3PDK4CHRM2
SCHEMBL13385934 0.85 PDK1 (0.33) PDK1PDK2PDK3PDK4CHRM2
SCHEMBL18802888 0.85 PDK1 (0.33) PDK1PDK2PDK3PDK4CHRM2
SCHEMBL18198996 0.84 FKBP1A (0.34) PDK1PDK2PDK3PDK4CHRM2
SCHEMBL13127639 0.76 EPHX1 (0.45) PDK1PDK2PDK3PDK4CHRM2
SCHEMBL110743 0.76 EPHX1 (0.45) PDK1PDK2PDK3PDK4CHRM2
SCHEMBL15113913 0.75 PDK1 (0.33) PDK1PDK2PDK3PDK4
SCHEMBL15116364 0.75 FKBP1A (0.35) PDK1PDK2PDK3PDK4CHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9541831-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-01-10 US disclosed
US-20150185609-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2015-07-02 US disclosed
US-9057952-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2015-06-16 US disclosed
US-8871421-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2014-10-28 US disclosed
US-20120115085-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2012-05-10 US disclosed