Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.32 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.32 |
| ▸ | BLM | P54132 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.31 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
| ▸ | MMP8 | P22894 | 1/20 | 0.30 |
| ▸ | ACACB | O00763 | 1/20 | 0.30 |
| ▸ | ACACA | Q13085 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10183779 | 0.86 | CA1 (0.32) | MEN1CYP3A4ALOX15KMT2ACYP4F2 | |
| SCHEMBL14465979 | 0.83 | CYP4F2 (0.34) | MEN1KMT2ACYP4F2CYP4A11CA1 | |
| SCHEMBL13925423 | 0.82 | CYP4F2 (0.34) | CYP4F2CYP4A11 | |
| SCHEMBL14802491 | 0.79 | MMP8 (0.40) | MMP8 | |
| SCHEMBL14258834 | 0.79 | — | — | |
| SCHEMBL10304389 | 0.79 | ELANE (0.36) | CYP4F2CYP4A11 | |
| SCHEMBL24157598 | 0.78 | CYP4F2 (0.30) | CYP4F2CYP4A11 | |
| SCHEMBL17365963 | 0.77 | CYP4F2 (0.39) | CYP4F2CYP4A11 | |
| SCHEMBL14681853 | 0.76 | CYP4F2 (0.36) | MEN1KMT2ACYP4F2CYP4A11BLM | |
| SCHEMBL47393 | 0.76 | ALDH1A1 (0.38) | CYP4F2CYP4A11 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-20170123318-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9568824-B2 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-02-14 | — | — | US | disclosed |
| US-9057952-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2015-06-16 | — | — | US | disclosed |
| US-8871421-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2014-10-28 | — | — | US | disclosed |
| US-20120115085-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2012-05-10 | — | — | US | disclosed |
| US-20120034559-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |
| US-7785767-B2 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2010-08-31 | — | — | US | disclosed |
| US-7666574-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2010-02-23 | — | — | US | disclosed |
| US-20090239176-A1 | RESIN FOR HYDROPHOBITIZING RESIST SURFACE, METHOD FOR MANUFACTURING THE RESIN, AND POSITIVE RESIST COMPOSITION CONTAINING THE RESIN | FUJIFILM CORPORATION (JP) | 2009-09-24 | — | — | US | disclosed |
| US-7550250-B2 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2009-06-23 | — | — | US | disclosed |
| US-20090098485-A1 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2009-04-16 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20070178405-A1 | Positive resist composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |