Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.31 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.31 |
| ▸ | DGAT1 | O75907 | 1/20 | 0.30 |
| ▸ | GAA | P10253 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13925423 | 0.88 | CYP4F2 (0.34) | ALDH1A1TSHRTDP1CYP4F2CYP4A11 | |
| SCHEMBL9115447 | 0.86 | TSHR (0.35) | ALDH1A1TSHRTDP1CYP4F2CYP4A11 | |
| SCHEMBL17355398 | 0.86 | CYP4F2 (0.33) | CYP4F2CYP4A11 | |
| SCHEMBL14510826 | 0.84 | RIPK1 (0.31) | — | |
| SCHEMBL12677512 | 0.84 | KDM4E (0.31) | — | |
| SCHEMBL10115926 | 0.84 | — | — | |
| SCHEMBL10304389 | 0.84 | ELANE (0.36) | ALDH1A1CYP4F2CYP4A11GAA | |
| SCHEMBL11941658 | 0.84 | CYP4F2 (0.32) | CYP4F2CYP4A11 | |
| SCHEMBL17365963 | 0.82 | CYP4F2 (0.39) | CYP4F2CYP4A11GAA | |
| SCHEMBL17370218 | 0.82 | ALDH1A1 (0.31) | ALDH1A1TDP1GAA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 950 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-12-12 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070172761-A1 | Positive photosensitive composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-20070148594-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-06-28 | — | — | US | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070065753-A1 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-20070003871-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-01-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, LPAR1, TLR7 | ALDH1A1 2671/4885TSHR 479/4885TDP1 4091/4885 |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SCO2, CBR1, OXGR1 | ALDH1A1 492/4885TSHR 847/4885TDP1 4539/4885 |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | RER1, AFF1, AFF4 | ALDH1A1 2890/4885TSHR 761/4885TDP1 4013/4885 |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | H1-0, HCN3, RER1 | ALDH1A1 1499/4885TSHR 1113/4885TDP1 4514/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | ALDH1A1 1887/4885TSHR 197/4885TDP1 4246/4885 |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | H1-10, H1-0, H1-2 | ALDH1A1 608/4885TSHR 584/4885TDP1 4774/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | ALDH1A1 4644/4885TSHR 439/4885TDP1 2821/4885 |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | H1-10, H1-0, CHRM1 | ALDH1A1 921/4885TSHR 511/4885TDP1 4357/4885 |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, H1-0, CA7 | ALDH1A1 2235/4885TSHR 63/4885TDP1 4547/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.