SCHEMBL10138876

SCHEMBL10138876

CCC(C)(C)C(=O)Oc1ccc(OC(C)OC2CCCCC2)cc1

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ELANE P08246 5/20 0.39
MEN1 O00255 2/20 0.37
KMT2A Q03164 2/20 0.37
MITF O75030 1/20 0.37
SMN1; SMN2 Q16637 3/20 0.36
NPC1 O15118 1/20 0.36
HPGD P15428 1/20 0.36
RAB9A P51151 1/20 0.36
BCHE P06276 1/20 0.36
NPSR1 Q6W5P4 1/20 0.35
CYP19A1 P11511 1/20 0.34
ALDH1A1 P00352 2/20 0.33
KDM4E B2RXH2 1/20 0.33
PPARG P37231 2/20 0.32
PPARA Q07869 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26156496 0.90 POLB (0.39) SMN1; SMN2HPGDRAB9ABCHEALDH1A1
SCHEMBL17147976 0.88 ELANE (0.38) ELANEMEN1KMT2ARAB9A
SCHEMBL12021615 0.83 ELANE (0.38) ELANEMEN1KMT2ANPC1RAB9A
SCHEMBL9963742 0.82 ELANE (0.37) ELANEMEN1KMT2AMITFSMN1; SMN2
SCHEMBL14028973 0.82 NPC1 (0.46) KMT2ASMN1; SMN2NPC1RAB9AALDH1A1
SCHEMBL9880580 0.80 ELANE (0.48) ELANEMEN1KMT2AALDH1A1
SCHEMBL10183956 0.80 SMN1; SMN2 (0.38) ELANEMEN1KMT2AMITFSMN1; SMN2
SCHEMBL13059578 0.78 HRH3 (0.43) NPC1RAB9A
SCHEMBL7271950 0.78 PPARG (0.32) ELANEMEN1KMT2ASMN1; SMN2KDM4E
SCHEMBL6123988 0.78 ELANE (0.46) ELANEMEN1KMT2APPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9217919-B2 Photosensitive composition, pattern-forming method using the composition, and resin used in the composition FUJIFILM CORPORATION (JP) 2015-12-22 US disclosed
US-8906253-B2 Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition FUJIFILM CORPORATION (JP) 2014-12-09 US disclosed
US-20140322914-A1 GAP EMBEDDING COMPOSITION, METHOD OF EMBEDDING GAP AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-10-30 US disclosed
US-8642245-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same FUJIFILM CORPORATION (JP) 2014-02-04 US disclosed
US-20130273741-A1 GAP EMBEDDING COMPOSITION, METHOD OF EMBEDDING GAP AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-10-17 US disclosed
US-8507174-B2 Positive resist composition, pattern forming method using the composition, and compound for use in the composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
US-20120231393-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-09-13 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8017299-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2011-09-13 US disclosed
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20110159433-A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-06-30 US disclosed
US-7858289-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-12-28 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090202946-A1 POSITIVE RESIST COMPOSITION FOR USE WITH ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-08-13 US disclosed
US-20090111047-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-30 US disclosed
US-20090111053-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110159433-A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION SUN2, LCP1, PHYKPL ELANE 1810/4885MEN1 2467/4885KMT2A 2523/4885
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION CROCC, ACTR2, MRE11 ELANE 772/4885MEN1 4100/4885KMT2A 2809/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.