SCHEMBL10141408

SCHEMBL10141408

CCC(C)(C)S(=O)(=O)N(C)C

nearest known ligand 0.30

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25632255 0.79
SCHEMBL14627537 0.70
SCHEMBL9608721 0.69 CA1 (0.32)
SCHEMBL553303 0.69 TSHR (0.38) TSHRTDP1
SCHEMBL18594489 0.69
SCHEMBL14037649 0.67 TSHR (0.35) TSHRTDP1
SCHEMBL657863 0.67
SCHEMBL12607342 0.67
SCHEMBL5076420 0.65
SCHEMBL5073889 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10654802-B2 Indoline derivatives and method for using and producing the same ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNVERSIT (US) 2020-05-19 US disclosed
US-20190135746-A1 INDOLINE DERIVATIVES AND METHOD FOR USING AND PRODUCING THE SAME ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNVERSITY OF ARIZONA 2019-05-09 US disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2017-09-07 US disclosed
US-9703196-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-07-11 US disclosed
US-20160370701-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-12-22 US disclosed
US-9465292-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2016-10-11 US disclosed
US-20160187780-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-06-30 US disclosed
US-9316912-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2016-04-19 US disclosed
US-20150205205-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORP (JP) 2015-07-23 US disclosed
US-8828643-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2014-09-09 US disclosed
US-20130177850-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2013-07-11 US disclosed
US-8426109-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
US-20120015293-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-19 US disclosed
US-8039197-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2011-10-18 US disclosed
US-20090181323-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2009-07-16 US disclosed
US-7531287-B2 Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure FUJIFILM CORPORATION (JP) 2009-05-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10654802-B2 Indoline derivatives and method for using and producing the same IDO1, IDO2, MMP1 TSHR 2581/4885TDP1 1931/4885
US-20190135746-A1 INDOLINE DERIVATIVES AND METHOD FOR USING AND PRODUCING THE SAME IDO1, INMT, MMP1 TSHR 1976/4885TDP1 2216/4885
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME POLR2H, POLQ, RXRA TSHR 3239/4885TDP1 1558/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.