SCHEMBL10141555

SCHEMBL10141555

CC(CO)(CO)COCCF

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16840299 0.87
SCHEMBL9634150 0.85 TSHR (0.45)
SCHEMBL27100322 0.85 MEN1 (0.33)
SCHEMBL26111262 0.80 APP (0.32)
SCHEMBL26112149 0.80 APP (0.32)
SCHEMBL10307724 0.80
SCHEMBL11026580 0.79 CYP4F2 (0.41)
SCHEMBL284203 0.79
SCHEMBL2742280 0.78 HSD17B10 (0.36)
SCHEMBL16153823 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2017-09-07 US disclosed
US-9703196-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-07-11 US disclosed
US-20160370701-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-12-22 US disclosed
US-9465292-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2016-10-11 US disclosed
US-20160187780-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-06-30 US disclosed
US-9316912-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2016-04-19 US disclosed
US-20150205205-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORP (JP) 2015-07-23 US disclosed
US-9023576-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2015-05-05 US disclosed
US-8828643-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2014-09-09 US disclosed
US-20130177850-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2013-07-11 US disclosed
US-8426109-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
US-20120015293-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-19 US disclosed
US-8039197-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2011-10-18 US disclosed
US-20110076622-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-31 US disclosed
US-7906268-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-03-15 US disclosed
US-20090181323-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2009-07-16 US disclosed