SCHEMBL10146446

SCHEMBL10146446

O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)N1CCCCCC1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.38
CA2 P00918 2/20 0.38
POLB P06746 1/20 0.38
TSHR P16473 4/20 0.37
KMT2A Q03164 3/20 0.37
ALDH1A1 P00352 3/20 0.33
MEN1 O00255 2/20 0.33
USP2 O75604 1/20 0.32
KDM4E B2RXH2 1/20 0.32
ATM Q13315 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
CYP3A4 P08684 1/20 0.31
CYP2C9 P11712 1/20 0.31
CYP2C19 P33261 1/20 0.31
PDK1 Q15118 2/20 0.30
PDK2 Q15119 2/20 0.30
PDK3 Q15120 2/20 0.30
PDK4 Q16654 2/20 0.30
HPGD P15428 1/20 0.30
ABCC9 O60706 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL190593 1.00 CA1 (0.38) CA1CA2POLBTSHRKMT2A
SCHEMBL2759961 1.00 CA1 (0.38) CA1CA2POLBTSHRKMT2A
SCHEMBL9986725 0.98 CA1 (0.37) CA1CA2POLBTSHRKMT2A
SCHEMBL21587515 0.96 CA1 (0.38) CA1CA2POLBTSHRKMT2A
SCHEMBL9609347 0.88 CA1 (0.41) CA1CA2POLBTSHRKMT2A
SCHEMBL17407603 0.86 ALDH1A1 (0.32) ALDH1A1L3MBTL1HPGD
SCHEMBL13008891 0.86 KDM4E (0.41) KMT2AALDH1A1MEN1KDM4EL3MBTL1
SCHEMBL9609348 0.85 CA1 (0.37) CA1CA2POLBTSHRKMT2A
SCHEMBL15383203 0.85 CA1 (0.35) CA1CA2POLBTSHRKMT2A
SCHEMBL18572501 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9709891-B2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20150168838-A1 POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2015-06-18 US disclosed
US-9057952-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2015-06-16 US disclosed
EP-1764649-B1 Positive resist composition and pattern forming method using the same FUJIFILM CORP (JP) 2014-11-12 EP disclosed
US-8877421-B2 Positive resist composition and pattern-forming method FUJIFILM CORPORATION (JP) 2014-11-04 US disclosed
US-8241840-B2 Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method FUJIFILM CORPORATION (JP) 2012-08-14 US disclosed
US-20120115085-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2012-05-10 US disclosed
US-20110250543-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2011-10-13 US disclosed
US-8017298-B2 Method of forming patterns FUJIFILM CORPORATION (JP) 2011-09-13 US disclosed
US-20100330507-A1 PATTERN FORMING METHOD, RESIST COMPOSITION TO BE USED IN THE PATTERN FORMING METHOD, NEGATIVE DEVELOPING SOLUTION TO BE USED IN THE PATTERN FORMING METHOD AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT TO BE USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-12-30 US disclosed
US-20100068661-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-03-18 US disclosed
US-7674567-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-03-09 US disclosed
US-7635553-B2 Pattern forming method and resist composition used therefor FUJIFILM CORPORATION (JP) 2009-12-22 US disclosed
US-20080318171-A1 METHOD OF FORMING PATTERNS FUJIFILM CORPORATION (JP) 2008-12-25 US disclosed
US-20080248420-A1 POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20070077519-A1 Pattern forming method and resist composition used therefor FUJI PHOTO FILM CO., LTD. 2007-04-05 US disclosed
US-20070065752-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-22 US disclosed
EP-1764649-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed