Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13564236 | 0.84 | — | — | |
| SCHEMBL3290589 | 0.79 | TSHR (0.41) | ALDH1A1TSHRTDP1 | |
| SCHEMBL13382670 | 0.78 | TSHR (0.50) | ALDH1A1TSHRTDP1 | |
| SCHEMBL9750843 | 0.77 | TSHR (0.39) | ALDH1A1TSHRTDP1 | |
| SCHEMBL30549094 | 0.77 | ALDH1A1 (0.39) | ALDH1A1TSHRTDP1 | |
| SCHEMBL29690437 | 0.77 | ALDH1A1 (0.39) | ALDH1A1TSHRTDP1 | |
| SCHEMBL10158383 | 0.76 | — | — | |
| SCHEMBL24400073 | 0.75 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1 | |
| SCHEMBL6443899 | 0.75 | TSHR (0.38) | ALDH1A1TSHRTDP1 | |
| SCHEMBL2856530 | 0.75 | LPAR3 (0.41) | ALDH1A1TSHRTDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230244149-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20180081272-A1 | THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-9902875-B2 | Composition for forming a coating type BPSG film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9880470-B2 | Composition for forming a coating type silicon-containing film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-30 | — | — | US | disclosed |
| US-9627204-B2 | Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-18 | — | — | US | disclosed |
| US-9624356-B2 | Ultraviolet absorber, composition for forming a resist under layer film, and patterning process | SHIN-ETSU CHEMIAL CO., LTD (JP) | 2017-04-18 | — | — | US | disclosed |
| US-9580623-B2 | Patterning process using a boron phosphorus silicon glass film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-28 | — | — | US | disclosed |
| US-20090136869-A1 | METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-28 | — | — | US | disclosed |
| US-20090011372-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080274432-A1 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
| US-20070172759-A1 | Antireflection film composition, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070128886-A1 | Substrate, method for producing the same, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-07 | — | — | US | disclosed |
| US-20070117044-A1 | Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-05-24 | — | — | US | disclosed |
| US-20070117411-A1 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-24 | — | — | US | disclosed |
| US-20070111134-A1 | solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | ALDH1A1 4644/4885TSHR 439/4885TDP1 2821/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | ALDH1A1 4644/4885TSHR 439/4885TDP1 2821/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.