SCHEMBL10163392

SCHEMBL10163392

CCC(C)C(=O)OC1CCC(=O)O1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 2/20 0.37
PRKCA P17252 3/20 0.36
CYP1A2 P05177 3/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
LMNA P02545 2/20 0.36
CYP3A4 P08684 2/20 0.36
TSHR P16473 2/20 0.36
ABCB11 O95342 1/20 0.36
ALDH1A1 P00352 1/20 0.36
MAPK1 P28482 1/20 0.36
MTOR P42345 1/20 0.36
HTT P42858 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
GMNN O75496 1/20 0.36
TP53 P04637 1/20 0.36
CYP2D6 P10635 1/20 0.36
NFKB1 P19838 1/20 0.36
BLM P54132 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10070922 0.85 CA1 (0.39) PRKCACYP1A2CA1CA9
SCHEMBL7568794 0.79 ALDH1A1 (0.39) PRKCACYP1A2KMT2AALDH1A1CYP2D6
SCHEMBL7747592 0.75 CA1 (0.43) PRKCACYP1A2MEN1KMT2ATSHR
SCHEMBL26499139 0.75 BCHE (0.32) HMGCRALDH1A1
SCHEMBL5304809 0.75 CA1 (0.43) PRKCACYP1A2MEN1KMT2ATSHR
SCHEMBL6851006 0.75 CA1 (0.35) PRKCACYP1A2CA1CA9
SCHEMBL28323529 0.73 CYP19A1 (0.35) HMGCRCYP1A2MEN1KMT2ASMN1; SMN2
SCHEMBL5170309 0.73 CA1 (0.40) PRKCACYP1A2LMNATSHRCA1
SCHEMBL447330 0.73 CA1 (0.40) PRKCACYP1A2LMNATSHRCA1
SCHEMBL5171201 0.73 CA1 (0.40) PRKCACYP1A2LMNATSHRCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8252504-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-28 US disclosed
US-8114571-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8114571-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8114570-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8114570-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8101335-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-8062831-B2 Carboxyl-containing lactone compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-22 US disclosed
US-8057981-B2 Resist composition, resist protective coating composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-15 US disclosed
US-8053179-B2 Monomolecular silicon oxide film for immobilizing a target molecule can be simply formed position-selectively in manufacture; use of a chemically amplified positive resist of a copolymer where a content of hydroxyl group-containing monomer is 5 % or less which is patterned and later removed SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-08 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080233521-A1 Method for manufacturing substrate for making microarray SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-25 US disclosed
US-20080118860-A1 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-22 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20080090173-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. 2008-04-17 US disclosed
US-20080090172-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-04-17 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 HMGCR 469/4885PRKCA 2574/4885CYP1A2 1339/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.