SCHEMBL10175615

SCHEMBL10175615

CCC(C)(C)C(=O)OC1CC(C)(COC)OC1=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12227822 0.89 FKBP1A (0.32)
SCHEMBL18023687 0.85
SCHEMBL110293 0.83 L3MBTL1 (0.35)
SCHEMBL12753455 0.79 MAPT (0.30)
SCHEMBL17166848 0.78
SCHEMBL12227778 0.78
SCHEMBL11926036 0.77 HMGCR (0.32)
SCHEMBL12761092 0.77 CYP3A4 (0.31)
SCHEMBL12227821 0.77 FKBP1A (0.33)
SCHEMBL12254783 0.76 ALDH1A1 (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2296039-B1 Positive photosensitive composition FUJIFILM CORP (JP) 2013-09-25 EP disclosed
US-8241830-B2 Positive resist composition and a pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-08-14 US disclosed
EP-1273970-B1 Positive photosensitive composition FUJIFILM CORP (JP) 2012-03-28 EP disclosed
US-7977029-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2011-07-12 US disclosed
US-7977029-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2011-07-12 US disclosed
US-7749678-B2 contains sulfonium compound; improved line edge roughness and pattern profile, and contrast of sensitivity and dissolution in extreme ultraviolet exposure FUJIFILM CORPORATION (JP) 2010-07-06 US disclosed
US-7749678-B2 contains sulfonium compound; improved line edge roughness and pattern profile, and contrast of sensitivity and dissolution in extreme ultraviolet exposure FUJIFILM CORPORATION (JP) 2010-07-06 US disclosed
US-7514201-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2009-04-07 US disclosed
US-7514201-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2009-04-07 US disclosed
US-20080318159-A1 POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-12-25 US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7214733-B2 Positive type resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-05-08 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed