SCHEMBL10175679

SCHEMBL10175679

C=CC(=O)OCCOC(=O)CCC(=O)OCCC(F)(F)F

nearest known ligand 0.50

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TSHR P16473 6/20 0.50
ALDH1A1 P00352 4/20 0.50
TP53 P04637 3/20 0.50
HIF1A Q16665 3/20 0.50
HSD17B10 Q99714 1/20 0.50
CYP3A4 P08684 2/20 0.46
THRB P10828 2/20 0.42
HPGD P15428 1/20 0.42
MAPK1 P28482 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
ADRA2A P08913 1/20 0.33
ADRA1A P35348 1/20 0.33
MAPT P10636 1/20 0.32
BLM P54132 1/20 0.32
DGKA P23743 1/20 0.32
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
SLC13A3 Q8WWT9 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10175676 0.93 TSHR (0.46) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL676520 0.89 TSHR (0.56) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL17119709 0.85 TSHR (0.67) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL303596 0.85 TSHR (0.67) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL21357981 0.83 ADRA2A (0.44) TSHRALDH1A1ADRA2AADRA1AMAPT
SCHEMBL28119528 0.81 TSHR (0.48) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL10175671 0.80 TSHR (0.43) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL10225907 0.80 TSHR (0.47) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL28959488 0.80 TSHR (0.79) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL9143157 0.79 TSHR (0.64) TSHRALDH1A1TP53HIF1AHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8642244-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-02-04 US disclosed
US-8501387-B2 2013-08-06 US disclosed
US-20120077125-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-29 US disclosed