SCHEMBL10178423

SCHEMBL10178423

CCC(C)(C)C(=O)OC(C)c1ccc(OC)c(OC)c1

nearest known ligand 0.49

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
HIF1A Q16665 2/20 0.49
LMNA P02545 2/20 0.44
ACHE P22303 1/20 0.43
CYP2C19 P33261 2/20 0.42
ALDH1A1 P00352 2/20 0.42
PPARG P37231 1/20 0.42
PPARD Q03181 1/20 0.42
PPARA Q07869 1/20 0.42
L3MBTL1 Q9Y468 2/20 0.42
CYP1A2 P05177 1/20 0.42
CYP2C9 P11712 1/20 0.42
KMT2A Q03164 1/20 0.42
NPSR1 Q6W5P4 1/20 0.42
HPGD P15428 1/20 0.40
TP53 P04637 1/20 0.40
MAPT P10636 1/20 0.40
ALOX12 P18054 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14258827 0.83 HCAR2 (0.38) LMNAALDH1A1
SCHEMBL2740674 0.81 NPSR1 (0.44) LMNACYP2C19ALDH1A1L3MBTL1CYP1A2
SCHEMBL2740668 0.81 AKR1C3 (0.52) LMNAL3MBTL1CYP1A2CYP2C9MAPT
SCHEMBL13581435 0.79 SMN1; SMN2 (0.39) HIF1ALMNAL3MBTL1CYP2C9KMT2A
SCHEMBL26853182 0.79 APP (0.39) HIF1ALMNAALDH1A1L3MBTL1CYP1A2
SCHEMBL14258839 0.78 ALDH1A1 (0.35) HIF1ALMNAACHEALDH1A1KMT2A
SCHEMBL10179048 0.78 HIF1A (0.52) HIF1ALMNAACHECYP2C19ALDH1A1
SCHEMBL2740692 0.78 GPR139 (0.41) LMNAACHEALDH1A1KMT2ANPSR1
SCHEMBL26862041 0.78 ESR1 (0.39) LMNACYP2C19ALDH1A1CYP1A2CYP2C9
SCHEMBL2740672 0.78 UGT2B7 (0.45) HIF1APPARGPPARACYP1A2KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 US disclosed
US-20170242338-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-08-24 US disclosed
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9470980-B2 Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device FUJIFILM CORPORATION (JP) 2016-10-18 US disclosed
US-20130045445-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-02-21 US disclosed
US-20130001751-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
US-20120076997-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-29 US disclosed
US-8124310-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-7799506-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-09-21 US disclosed
US-7625690-B2 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2009-12-01 US disclosed
US-20090087784-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20090087776-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20080081289-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed