SCHEMBL2740692

SCHEMBL2740692

CCC(C)(C)C(=O)OC(C)c1ccc(C)cc1

nearest known ligand 0.41

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
GPR139 Q6DWJ6 1/20 0.41
ACHE P22303 1/20 0.39
HPGD P15428 1/20 0.37
STAT3 P40763 1/20 0.36
ALOX5 P09917 1/20 0.36
ALDH1A1 P00352 2/20 0.36
LMNA P02545 2/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
HCAR2 Q8TDS4 1/20 0.34
RIPK1 Q13546 1/20 0.34
GRM1 Q13255 1/20 0.34
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
POLB P06746 1/20 0.33
CYP26A1 O43174 1/20 0.33
MAPT P10636 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2740689 0.95 GPR139 (0.39) GPR139ACHEHPGDSTAT3ALOX5
SCHEMBL14258827 0.93 HCAR2 (0.38) GPR139ALDH1A1LMNASMN1; SMN2HCAR2
SCHEMBL13581435 0.89 SMN1; SMN2 (0.39) HPGDLMNASMN1; SMN2HCAR2RIPK1
SCHEMBL26862041 0.87 ESR1 (0.39) ALDH1A1LMNAMAPT
SCHEMBL13704205 0.86 RIPK1 (0.33) GPR139LMNAHCAR2RIPK1GRM1
SCHEMBL15945490 0.86 LMNA (0.41) ALDH1A1LMNASMN1; SMN2
SCHEMBL13704264 0.86 GPR139 (0.39) GPR139ACHEHPGDSTAT3ALOX5
SCHEMBL682792 0.85 HCAR2 (0.49) ALDH1A1LMNAHCAR2RIPK1MEN1
SCHEMBL14258839 0.84 ALDH1A1 (0.35) GPR139ACHEALDH1A1LMNAHCAR2
SCHEMBL2740674 0.84 NPSR1 (0.44) HPGDALOX5ALDH1A1LMNASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 83 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230350290-A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-20230333478-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT FUJIFILM CORPORATION (JP) 2023-10-19 US disclosed
US-11747727-B2 Chemical liquid, chemical liquid storage body, pattern forming method, and kit FUJIFILM CORPORATION (JP) 2023-09-05 US disclosed
US-11733611-B2 Pattern forming method, method for producing electronic device, and kit FUJIFILM CORPORATION (JP) 2023-08-22 US disclosed
US-20230229078-A1 CHEMICAL LIQUID SUPPLY METHOD AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2023-07-20 US disclosed
US-11693321-B2 Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-04 US disclosed
US-20230135117-A1 SOLUTION, SOLUTION STORAGE BODY, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-20180217503-A1 TREATMENT LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-20180217499-A1 TREATMENT LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-20180210339-A1 RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2018-07-26 US disclosed
US-7625690-B2 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2009-12-01 US disclosed
US-20090087789-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-7498116-B2 Resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-03-03 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080241750-A1 RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080220370-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-09-11 US disclosed
US-20080081292-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080076062-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20070224539-A1 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed