Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 1/20 | 0.50 |
| ▸ | ATM | Q13315 | 1/20 | 0.47 |
| ▸ | GRM1 | Q13255 | 6/20 | 0.41 |
| ▸ | CTSV | O60911 | 1/20 | 0.38 |
| ▸ | CTSL | P07711 | 1/20 | 0.38 |
| ▸ | CTSS | P25774 | 1/20 | 0.38 |
| ▸ | CTSK | P43235 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.36 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | HPGD | P15428 | 1/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | LNPEP | Q9UIQ6 | 1/20 | 0.34 |
| ▸ | POLB | P06746 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17721441 | 0.92 | CYP19A1 (0.41) | CYP19A1ATMGRM1CTSVCTSL | |
| SCHEMBL6854496 | 0.86 | CYP19A1 (0.47) | CYP19A1ATMGRM1CTSVCTSL | |
| SCHEMBL8861066 | 0.81 | CYP19A1 (0.54) | CYP19A1ATMGRM1CTSVCTSL | |
| SCHEMBL8861069 | 0.81 | CYP19A1 (0.54) | CYP19A1ATMGRM1CTSVCTSL | |
| SCHEMBL32689187 | 0.81 | CYP19A1 (0.48) | CYP19A1ATMGRM1CTSVCTSL | |
| SCHEMBL32688877 | 0.81 | CYP19A1 (0.48) | CYP19A1ATMGRM1CTSVCTSL | |
| SCHEMBL4657482 | 0.80 | CYP19A1 (0.56) | CYP19A1ATMGRM1CTSVCTSL | |
| SCHEMBL2995532 | 0.80 | CYP19A1 (0.56) | CYP19A1ATMGRM1ALDH1A1EPHX2 | |
| SCHEMBL17550548 | 0.80 | CYP19A1 (0.47) | CYP19A1ATMGRM1CTSVCTSL | |
| SCHEMBL9917017 | 0.79 | CYP19A1 (0.59) | CYP19A1ATMGRM1CTSVCTSL |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-06-15 | — | — | US | disclosed |
| US-20180074406-A1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-20180074406-A1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-9897913-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9897913-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20170145142-A1 | RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-05-25 | — | — | US | disclosed |
| US-9429840-B2 | Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9417523-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive composition used therein, resist film, manufacturing method of electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-16 | — | — | US | disclosed |
| US-9239517-B2 | Compound, radiation-sensitive composition and resist pattern formation method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-01-19 | — | — | US | disclosed |
| US-20150376157-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOL DERIVATIVE FOR USE IN THE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-12-31 | — | — | US | disclosed |
| US-20150118627-A1 | PATTERN FORMING METHOD, COMPOSITION USED TEHREIN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150030980-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2015-01-29 | — | — | US | disclosed |
| US-20150010858-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION USED THEREIN, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-8846292-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-09-30 | — | — | US | disclosed |
| US-20130150627-A1 | PURIFICATION METHOD FOR CYCLIC COMPOUND | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2013-06-13 | — | — | US | disclosed |
| US-20130122423-A1 | COMPOUND, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2013-05-16 | — | — | US | disclosed |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-8110334-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-02-07 | — | — | US | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CYP19A1 3684/4885ATM 4436/4885GRM1 4204/4885 |
| US-20130150627-A1 | PURIFICATION METHOD FOR CYCLIC COMPOUND | PCLAF, PCNA, VIP | CYP19A1 996/4885ATM 1750/4885GRM1 4819/4885 |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | SOAT2, SOAT1, FAR1 | CYP19A1 11/4885ATM 2578/4885GRM1 2784/4885 |
| US-20130122423-A1 | COMPOUND, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | DDB1, DNAJB11, RAD51 | CYP19A1 167/4885ATM 108/4885GRM1 4246/4885 |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | PARG, RAD51, SRMS | CYP19A1 1064/4885ATM 923/4885GRM1 3395/4885 |
| US-20180074406-A1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | RDX, SLC11A2, FBL | CYP19A1 1295/4885ATM 4013/4885GRM1 1163/4885 |
| US-20150376157-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOL DERIVATIVE FOR USE IN THE COMPOSITION | HEATR1, HSP90AB1, HSP90AA1 | CYP19A1 102/4885ATM 2931/4885GRM1 2968/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | CYP19A1 1447/4885ATM 628/4885GRM1 2776/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.