SCHEMBL10229341

SCHEMBL10229341

CCC(=O)OC(C)OC1C2CC3CC(C2)CC1C3

nearest known ligand 0.35

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 5/20 0.34
EPHX2 P34913 4/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
EPHX1 P07099 1/20 0.31
CTSV O60911 1/20 0.31
CTSL P07711 1/20 0.31
CTSS P25774 1/20 0.31
CTSK P43235 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19661062 0.87 L3MBTL1 (0.41) HSD11B1EPHX2L3MBTL1CTSVCTSL
SCHEMBL12963704 0.81 TSHR (0.41) HSD11B1EPHX2EPHX1
SCHEMBL824210 0.81 HSD11B1 (0.33) HSD11B1EPHX2L3MBTL1
SCHEMBL15279656 0.79 HSD11B1 (0.35) HSD11B1EPHX2EPHX1
SCHEMBL47428 0.78 HSD11B1 (0.32) HSD11B1EPHX2L3MBTL1EPHX1
SCHEMBL12198426 0.76 HSD11B1 (0.30) HSD11B1
SCHEMBL26939520 0.75 EPHX2 (0.36) HSD11B1EPHX2EPHX1
SCHEMBL2740747 0.75 HSD11B1 (0.33) HSD11B1EPHX2EPHX1
SCHEMBL2740748 0.75 HSD11B1 (0.33) HSD11B1EPHX2EPHX1
SCHEMBL546734 0.74 EPHX1 (0.47) HSD11B1EPHX2L3MBTL1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124310-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-7977029-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2011-07-12 US disclosed
US-7887988-B2 Acid generator; irradiating with actinic radiation FUJIFILM CORPORATION (JP) 2011-02-15 US disclosed
US-7625690-B2 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2009-12-01 US disclosed
US-20090087784-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20080318159-A1 POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-12-25 US disclosed